大规模阵列SPAD淬灭电路设计
发布时间：2018-12-27 08:33
【摘要】：单光子雪崩光电二极管(Single Photo Avalanche Diode, SPAD)探测器的快速传感和淬灭是实现单光子探测的关键前提条件。随着SPAD研究的不断发展,器件阵列规模不断扩大,使得与之匹配的淬灭电路设计难度加大。而淬灭电路性能的优劣直接影响着探测系统的整体性能。本文针对应用于大规模阵列SPAD探测器的淬灭电路进行了深入地研究。本文在面积和功耗严格约束的条件下,提出了两种应用于大规模阵列SPAD的淬灭电路设计：电阻感应淬灭电路和电容感应淬灭电路。两种电路采用相同的结构框架,结合主动、门控两种淬灭方式,通过电阻或电容感应雪崩电流。电阻感应淬灭电路采用基于失调控制的差分放大低阈值检测电路,打破传统设计中淬灭电路的检测阈值必须大于MOS管开启电压的约束,实现对雪崩电流的快速检测。电容感应淬灭电路采用SPAD寄生电容感应雪崩电流,极大程度地缩减了版图面积；同时采用反相器作为检测电路,加快了淬灭过程,降低了系统功耗。两种淬灭电路都采用TSMC 0.35μm CMOS工艺完成仿真设计和流片验证。两者后仿真结果均满足设计指标要求,可以检测低至200μA的雪崩电流,在2ns内实现复位,并在5ns内输出单光子响应脉冲供后级读出电路处理。该结果表明,与国内外现有研究成果相比,本文设计的淬灭电路在复位和淬灭时间方面具有一定的优势。两种电路分别通过8×8和64×64阵列规模的读出电路系统进行流片验证。芯片测试结果表明,两种淬灭电路都可以实现感应并淬灭雪崩电流等功能。但是由于大阵列系统版图寄生效应等的影响,测试结果与仿真结果存在一定的差距,论文对此给出了详细的分析和改进方法。
[Abstract]:Fast sensing and quenching of single photon avalanche photodiode (Single Photo Avalanche Diode, SPAD) detector is a key prerequisite for single photon detection. With the development of SPAD research, the scale of device array is expanding, which makes it more difficult to design the matched quenched circuit. The performance of quenching circuit directly affects the overall performance of the detection system. In this paper, the quenching circuit used in large scale array SPAD detectors is studied. In this paper, under the condition of strict area and power constraints, two kinds of quenching circuit design for large-scale array SPAD are proposed: resistive induction quenching circuit and capacitive induction quenching circuit. The two circuits adopt the same structure frame, combined with active and gated quenching methods, and induce avalanche current by resistance or capacitance. Resistance induction quenching circuit adopts differential amplification low threshold detection circuit based on offset control. The detection threshold of quenching circuit in traditional design must be greater than the limit of MOS switch on voltage to realize the rapid detection of avalanche current. The capacitance induction quenching circuit uses SPAD parasitic capacitance to induce avalanche current which greatly reduces the layout area and uses the inverter as the detection circuit to speed up the quenching process and reduce the power consumption of the system. Both quenching circuits are designed and verified by TSMC 0.35 渭 m CMOS process. Both simulation results meet the design requirements, and can detect avalanche currents as low as 200 渭 A, reset in 2ns, and output single photon response pulses in 5ns for post-stage readout circuit processing. The results show that the quenching circuit designed in this paper has some advantages in reset and quenching time compared with the existing research results at home and abroad. The two circuits are verified by the readout circuit system with array size of 8 脳 8 and 64 脳 64, respectively. The chip test results show that both quenched circuits can induce and quench avalanche current. However, due to the effect of parasitic effect of large array system layout, there is a certain gap between the test results and the simulation results. This paper gives a detailed analysis and improvement methods.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN402;TN312.7
[Abstract]:Fast sensing and quenching of single photon avalanche photodiode (Single Photo Avalanche Diode, SPAD) detector is a key prerequisite for single photon detection. With the development of SPAD research, the scale of device array is expanding, which makes it more difficult to design the matched quenched circuit. The performance of quenching circuit directly affects the overall performance of the detection system. In this paper, the quenching circuit used in large scale array SPAD detectors is studied. In this paper, under the condition of strict area and power constraints, two kinds of quenching circuit design for large-scale array SPAD are proposed: resistive induction quenching circuit and capacitive induction quenching circuit. The two circuits adopt the same structure frame, combined with active and gated quenching methods, and induce avalanche current by resistance or capacitance. Resistance induction quenching circuit adopts differential amplification low threshold detection circuit based on offset control. The detection threshold of quenching circuit in traditional design must be greater than the limit of MOS switch on voltage to realize the rapid detection of avalanche current. The capacitance induction quenching circuit uses SPAD parasitic capacitance to induce avalanche current which greatly reduces the layout area and uses the inverter as the detection circuit to speed up the quenching process and reduce the power consumption of the system. Both quenching circuits are designed and verified by TSMC 0.35 渭 m CMOS process. Both simulation results meet the design requirements, and can detect avalanche currents as low as 200 渭 A, reset in 2ns, and output single photon response pulses in 5ns for post-stage readout circuit processing. The results show that the quenching circuit designed in this paper has some advantages in reset and quenching time compared with the existing research results at home and abroad. The two circuits are verified by the readout circuit system with array size of 8 脳 8 and 64 脳 64, respectively. The chip test results show that both quenched circuits can induce and quench avalanche current. However, due to the effect of parasitic effect of large array system layout, there is a certain gap between the test results and the simulation results. This paper gives a detailed analysis and improvement methods.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN402;TN312.7
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