纳米尺度下LER对线宽测量结果影响的研究
发布时间：2018-12-30 11:20
【摘要】：集成电路的刻线线宽测量是目前微纳计量领域的热点。主要研究的是对纳米尺度的刻线尺寸以及它的表面因素参数进行表征的技术,表征尺寸一般在几十到数百纳米。目前迅猛发展的半导体行业对集成电路的集成度越来越高的要求推动着这项技术的不断发展。但是,光刻技术的不断进步带来的集成电路的刻线尺寸减小到纳米级别的同时,线边缘粗糙度(Line Edge Roughness,LER)却并不随着刻线尺寸而减小,这主要是由于制造工艺本身导致的。LER在线宽加工误差中所占比重不断增加,因此研究LER对线宽测量的影响极为重要。原子力显微镜(Atomic Force Microscopy,AFM)由于其高分辨率和对测量样本材料的高度适应性而成为现在线宽测量领域的一个重要工具。本文针对目前LER对线宽测量的影响越来越大的情况,通过对于纳米线宽边缘粗糙度的测量和表征来研究线宽边缘粗糙度对线宽测量结果的影响。本文简要介绍了AFM的工作原理、仪器结构和工作模式,分析了它在线宽测量中的应用以及对测量图像影响较大的一些因素并提出了相应的校正方法。探讨了目前纳米线宽测量领域中针对这些问题所出现的研究趋势,为纳米线宽测量的更深入的研究工作打好基础。本文采用了一个改进的线边缘形貌测量方法,通过对纳米线宽的底部、中部和顶部三条线宽以及对应的六个关键点的测量。对线边缘粗糙度进行了准确表征。并利用Matlab对AFM扫描图像中提取出的6条关键点组成的线边缘进行了统计和核算,详细分析了线边缘粗糙度对于线宽测量的影响,研究了不同测量方法的线宽测量值不同的原因,并且建立了线边缘形貌影响线宽测量值的理论模型,研究了线边缘对局部线宽和平均线宽的不同影响。阐述了样本位置误差的计算和修正方法。用AFM测量了刻线样本的不同区域。依据测量不确定度估计的相关理论,提出了评定包括来源于图像倾斜校正等多种误差的不确定度方法,建立了使用Innova型AFM测量线宽的不确定度估计体系,并进行了相关评定。合成了刻线顶部、中部、底部线宽的标准不确定度并且计算了扩展不确定度。
[Abstract]:Line width measurement of integrated circuits is a hot spot in the field of micro and nano measurement. The main research is on the characterization of nanoscale line size and its surface factor parameters, which are generally in the range of tens to hundreds of nanometers. With the rapid development of semiconductor industry, the integration of integrated circuits is becoming more and more important. However, with the development of lithography technology, the wire size of integrated circuit is reduced to the nanometer level, while the edge roughness (Line Edge Roughness,LER) does not decrease with the line size. This is mainly due to the manufacturing process itself. The proportion of LER on line width processing error is increasing, so it is very important to study the influence of LER on line width measurement. Atomic force microscope (Atomic Force Microscopy,AFM) has become an important tool in the field of linewidth measurement because of its high resolution and high adaptability to measuring sample materials. In view of the increasing influence of LER on linewidth measurement, the influence of linewidth edge roughness on linewidth measurement results is studied by measuring and characterizing the edge roughness of nanowire width. This paper briefly introduces the working principle, instrument structure and working mode of AFM, analyzes its application in line width measurement and some factors that have great influence on the measurement image, and puts forward the corresponding correction methods. The research trend of these problems in the field of nanowire width measurement is discussed in order to lay a good foundation for further research on nanowire width measurement. In this paper, an improved method is used to measure the shape of the nanowires, including the bottom, the middle and the top of the nanowires, and the corresponding six key points. The line edge roughness is accurately characterized. The line edge of six key points extracted from AFM scanning image is counted and calculated by Matlab. The influence of line edge roughness on line width measurement is analyzed in detail, and the reason why the line width measurement value of different measurement method is different is studied. A theoretical model of line edge topography influencing line width measurement is established, and the different effects of line edge on local line width and average line width are studied. The calculation and correction method of sample position error are described. AFM was used to measure the different regions of the engraved samples. Based on the theory of measurement uncertainty estimation, this paper presents a method to evaluate the uncertainty of various errors, including image tilt correction, and establishes a system of uncertainty estimation using Innova type AFM to measure line width, and makes a correlation evaluation. The standard uncertainty of line width at top, middle and bottom is synthesized and the extended uncertainty is calculated.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN407
，
本文编号：2395513
[Abstract]:Line width measurement of integrated circuits is a hot spot in the field of micro and nano measurement. The main research is on the characterization of nanoscale line size and its surface factor parameters, which are generally in the range of tens to hundreds of nanometers. With the rapid development of semiconductor industry, the integration of integrated circuits is becoming more and more important. However, with the development of lithography technology, the wire size of integrated circuit is reduced to the nanometer level, while the edge roughness (Line Edge Roughness,LER) does not decrease with the line size. This is mainly due to the manufacturing process itself. The proportion of LER on line width processing error is increasing, so it is very important to study the influence of LER on line width measurement. Atomic force microscope (Atomic Force Microscopy,AFM) has become an important tool in the field of linewidth measurement because of its high resolution and high adaptability to measuring sample materials. In view of the increasing influence of LER on linewidth measurement, the influence of linewidth edge roughness on linewidth measurement results is studied by measuring and characterizing the edge roughness of nanowire width. This paper briefly introduces the working principle, instrument structure and working mode of AFM, analyzes its application in line width measurement and some factors that have great influence on the measurement image, and puts forward the corresponding correction methods. The research trend of these problems in the field of nanowire width measurement is discussed in order to lay a good foundation for further research on nanowire width measurement. In this paper, an improved method is used to measure the shape of the nanowires, including the bottom, the middle and the top of the nanowires, and the corresponding six key points. The line edge roughness is accurately characterized. The line edge of six key points extracted from AFM scanning image is counted and calculated by Matlab. The influence of line edge roughness on line width measurement is analyzed in detail, and the reason why the line width measurement value of different measurement method is different is studied. A theoretical model of line edge topography influencing line width measurement is established, and the different effects of line edge on local line width and average line width are studied. The calculation and correction method of sample position error are described. AFM was used to measure the different regions of the engraved samples. Based on the theory of measurement uncertainty estimation, this paper presents a method to evaluate the uncertainty of various errors, including image tilt correction, and establishes a system of uncertainty estimation using Innova type AFM to measure line width, and makes a correlation evaluation. The standard uncertainty of line width at top, middle and bottom is synthesized and the extended uncertainty is calculated.
【学位授予单位】：哈尔滨工业大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN407
，
本文编号：2395513
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