双极晶体管中子辐照后的高温退火特性

发布时间：2019-01-04 13:49

【摘要】：利用硅双极晶体管在线监测中子注量,其直流增益和损伤常数是作为探测器指标的重要参数。高温退火可使受到中子辐照的双极晶体管性能部分恢复,进而可以重复使用。开展高温退火特性研究,分析双极晶体管直流增益的恢复程度以及损伤常数的重复性。在快中子脉冲堆上对贴片型3DG121C双极晶体管进行三轮中子辐照,每轮辐照累计注量2.64×10~(13)cm~(-2)。经过第一轮中子辐照后,双极晶体管直流增益下降至辐照前的40%,经过180℃连续24 h的高温退火后,直流增益恢复至辐照前的67%;经过第二轮辐照后,直流增益下降至第二轮辐照前的50%,在相同条件下退火后,直流增益恢复至第二轮辐照前的73%;经过第三轮辐照后,直流增益下降至第三轮辐照前的58%,在相同条件下退火后,其直流增益恢复至第三轮辐照前的87%。三轮实验结果表明:双极晶体管直流增益倒数随辐照中子注量变化的线性关系基本一致,具体表现为其损伤常数具有很好的重复性。利用该高温退火特性,将双极晶体管作为中子注量探测器应用于快中子脉冲堆中子注量在线监测,监测结果与活化箔结果基本吻合。
[Abstract]:Using silicon bipolar transistor to monitor neutron flux on line, DC gain and damage constant are important parameters of detector. High temperature annealing can partially recover the properties of neutron irradiated bipolar transistors and then be reused. The characteristics of high temperature annealing are studied and the recovery degree of DC gain and the repeatability of damage constant of bipolar transistors are analyzed. In fast neutron pulse reactor, a patch type 3DG121C bipolar transistor was irradiated by three rounds of neutron irradiation. The cumulative radiation flux per round was 2.64 脳 10 ~ (13) cm~ (-2). After the first neutron irradiation, the DC gain of bipolar transistor decreases to 40 before irradiation, and after annealing at 180 鈩，

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