单晶硅超精密切削的刀具磨损试验研究
发布时间：2019-01-05 03:17
【摘要】：针对单晶硅超精密切削过程中金刚石刀具磨损问题,对单晶硅进行超精密车削试验。通过观察金刚石刀具磨损演变过程,分析刀具的磨损过程对表面加工质量的影响,得到刀具磨损机理。结果表明,在超精密切削单晶硅过程中,随着切削距离的增加,刀具磨损面积逐渐增加,加工过程中产生的碳化硅及类似金刚石碳颗粒与刀具后刀面发生划擦造成磨粒磨损;同时,由于交变载荷作用导致的应力疲劳现象,进而伴有解理断裂产生。当切削路程小于4km时,加工表面的粗糙度Ra值在200nm以内,切削路程大于8km时,表面粗糙度Ra值在350nm~400nm之间。
[Abstract]:Aiming at the wear problem of diamond tool in the process of single crystal silicon ultra-precision cutting, the ultra-precision turning test of single crystal silicon is carried out. By observing the evolution process of diamond tool wear and analyzing the influence of tool wear process on surface machining quality, the tool wear mechanism is obtained. The results show that the tool wear area increases gradually with the increase of cutting distance during ultra-precision cutting of monocrystalline silicon. At the same time, stress fatigue caused by alternating load is accompanied by cleavage fracture. When the cutting distance is less than 4km, the roughness Ra value of the machined surface is within 200nm. When the cutting distance is larger than 8km, the Ra value of surface roughness is between 350nm~400nm.
【作者单位】： 沈阳航空航天大学航空制造工艺数字化国防重点学科实验室;
【基金】：航空科学基金(2013ZE54002)
【分类号】：TN305.1
本文编号：2401190
[Abstract]:Aiming at the wear problem of diamond tool in the process of single crystal silicon ultra-precision cutting, the ultra-precision turning test of single crystal silicon is carried out. By observing the evolution process of diamond tool wear and analyzing the influence of tool wear process on surface machining quality, the tool wear mechanism is obtained. The results show that the tool wear area increases gradually with the increase of cutting distance during ultra-precision cutting of monocrystalline silicon. At the same time, stress fatigue caused by alternating load is accompanied by cleavage fracture. When the cutting distance is less than 4km, the roughness Ra value of the machined surface is within 200nm. When the cutting distance is larger than 8km, the Ra value of surface roughness is between 350nm~400nm.
【作者单位】： 沈阳航空航天大学航空制造工艺数字化国防重点学科实验室;
【基金】：航空科学基金(2013ZE54002)
【分类号】：TN305.1
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，本文编号：2401190
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