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热电子应力下nMOSFET中复合电流的退化特性研究

发布时间:2019-01-18 07:31
【摘要】:复合电流曲线面积S这一参数被引入来研究了热电子应力下n型金属氧化物半导体场效应晶体管(nMOSFET)中复合电流的退化特性。电子注入应力中,复合电流随着热电子应力后峰值变小并且曲线展宽。基于对S变化的分析,发现这种变化归因于热电子应力过程中,部分热电子占据了部分界面陷阱使得有效的界面态浓度Nit变小,同时另一部分注入进栅漏交叠区的氧化层中而使得有效的漏端电压UD增加。进一步发现,S的变化量△S与应力时间在双对数坐标下成线性关系:△S∝t~a,其中a=0.6。
[Abstract]:The composite current curve area S is introduced to study the degradation characteristics of composite current in n-type metal oxide semiconductor field effect transistor (nMOSFET) under hot electron stress. In the electron injection stress, the peak value of the composite current decreases with the hot electron stress and the curve widens. Based on the analysis of the change of S, it is found that this change is attributed to the process of hot electron stress. Some hot electrons occupy part of the interface trap and make the effective interfacial state concentration (Nit) smaller. At the same time, the other part is injected into the oxide layer of the gate leakage overlap area, which increases the effective leakage voltage UD. It is further found that there is a linear relationship between the variation of S and the stress time in the logarithmic coordinates of S, where a 0. 6.
【作者单位】: 西安邮电大学电子工程学院;
【基金】:国家自然科学研究基金资助项目(61306131)
【分类号】:TN386.1

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