化学腐蚀硅表面结构反射率影响因素的研究
发布时间：2019-01-18 12:19
【摘要】：单晶硅片在碱溶液中的腐蚀会引起表面结构的变化,利用紫外可见分光光度计测量硅片表面反射率,发现碱溶液的浓度、腐蚀时间、添加剂的选择(无水乙醇或异丙醇)以及添加剂的浓度均对硅片表面反射率有影响。比较几个因素发现碱溶液的浓度和腐蚀时间对硅片表面反射率影响最大。当腐蚀温度为80℃,NaOH固体浓度为15 g/L,添加剂无水乙醇体积分数10%时,腐蚀30 min得到硅片反射率最低,达到11.15%。
[Abstract]:The corrosion of monocrystalline silicon wafer in alkali solution will cause the change of surface structure. The reflectivity of silicon wafer is measured by ultraviolet visible spectrophotometer, and the concentration of alkali solution and the corrosion time are found. The selection of additives (anhydrous ethanol or isopropanol) and the concentration of additives all affect the surface reflectivity of silicon wafer. By comparing several factors, it is found that the concentration of alkali solution and corrosion time have the greatest influence on the surface reflectivity of silicon wafer. When the corrosion temperature is 80 鈩，
本文编号：2410712
[Abstract]:The corrosion of monocrystalline silicon wafer in alkali solution will cause the change of surface structure. The reflectivity of silicon wafer is measured by ultraviolet visible spectrophotometer, and the concentration of alkali solution and the corrosion time are found. The selection of additives (anhydrous ethanol or isopropanol) and the concentration of additives all affect the surface reflectivity of silicon wafer. By comparing several factors, it is found that the concentration of alkali solution and corrosion time have the greatest influence on the surface reflectivity of silicon wafer. When the corrosion temperature is 80 鈩，
本文编号：2410712
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