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基于SIW的W波段毫米波功率合成技术研究

发布时间:2019-01-21 18:23
【摘要】:高功率放大器是无线通信系统发射机中不可或缺的关键部件。随着无线通信系统向高频的快速发展,对于高频、高效、宽带、大功率的功率器件的需求与日俱增。但随着频率的增加,固态功率器件的尺寸和功率容量却在显著地减少,单个固态功率器件常常难以满足系统的需求。为此,毫米波高功率发射系统常常需要功率合成技术得以实现,其中空间功率合成技术的合成效率几乎不受合成路数的影响,在多路合成时具有显著优势。本文充分结合了空间功率合成技术和新型的电磁波导波结构——基片集成波导(SIW)的优势,在毫米波高频段W波段提出了多种功率合成实施方案。本文的主要工作成果有:1、在W波段将常用的矩形波导-微带探针过渡和微带-SIW直线渐变过渡相结合,设计了SIW到矩形波导的宽带探针过渡,该设计具有结构体积小、结构简单的优点。实物测试结果表明,一对过渡转换器与一段SIW所组成的背靠背结构在整个W波段的反射系数都小于-10dB,而总插损在75-106GHz的频率范围内都小于2dB,具有低损宽带的特点。2、从开槽SIW的分析出发,基于行波功率合成理论,在W波段基于开槽SIW提出了一个四路行波功率合成器。该合成器工作在88—94.2GHz的频段内,插入损耗在0.34 dB到0.73dB之间,具有易集成、带宽相对较宽、插入损耗较低、合成效率较高、合成路数易扩展的特点。3、基于双层SIW宽边缝隙耦合器,在W波段提出了一种双层SIW四路功率合成器。由于耦合器高隔离度的特性,以及耦合都发生在SIW内部而没有能量的泄露,该合成器具有低损宽带、合成效率高、横向尺寸小等优点。4、基于多层SIW与矩形波导的过渡结构,在W波段提出了一种四层SIW四路功率合成器。该合成器采用波导内空间功率合成技术,不仅具有低损宽带、合成效率高、结构简单等优点,且其合成效率几乎不随合成路数的影响。
[Abstract]:High power amplifier is an indispensable key component in wireless communication system transmitter. With the rapid development of wireless communication system to high frequency, the demand for high frequency, high efficiency, wide band and high power devices is increasing day by day. However, with the increase of frequency, the size and power capacity of solid-state power devices decrease significantly, and a single solid-state power device is often difficult to meet the needs of the system. Therefore, millimeter-wave high-power transmission systems often need power combination technology to realize, in which the synthesis efficiency of space power synthesis technology is almost independent of the number of synthetic paths, and has a significant advantage in multi-channel synthesis. In this paper, the advantages of space power synthesis technology and a new electromagnetic guided wave structure-substrate integrated waveguide (SIW) are fully combined, and a variety of power combination schemes are proposed in the W-band of millimeter-wave high frequency band. The main results of this paper are as follows: 1. The wide band probe transition from SIW to rectangular waveguide is designed by combining the transition of rectangular waveguide with microstrip probe and the linear gradual transition of microstrip to SIW in W band. The advantage of simple structure. The physical test results show that the reflection coefficient of the back-to-back structure composed of a pair of transition converters and a section of SIW is less than -10 dB in the whole W band, while the total insertion loss is less than 2 dB in the frequency range of 75-106GHz, which has the characteristics of low loss broadband. Based on the analysis of slotted SIW and the theory of traveling wave power combination, a four-channel traveling wave power synthesizer is proposed in W band based on grooved SIW. The synthesizer works in the frequency band of 88-94.2GHz, and the insertion loss is between 0.34 dB and 0.73dB. It has the characteristics of easy integration, relatively wide bandwidth, low insertion loss, high synthesis efficiency and easy expansion of the synthesis path. Based on double layer SIW wide edge slot coupler, a double layer SIW four channel power synthesizer is proposed in W band. Because of the high isolation of coupler and the fact that the coupling occurs inside SIW without energy leakage, the synthesizer has the advantages of low loss broadband, high synthesis efficiency and small transverse size. 4, based on the transition structure between multilayer SIW and rectangular waveguide. A four-layer SIW four-way power synthesizer is proposed in the W band. The synthesizer uses space power synthesis technology in waveguide, which has the advantages of low loss broadband, high synthesis efficiency and simple structure, and its synthesis efficiency is almost independent of the number of synthetic paths.
【学位授予单位】:电子科技大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN722.75;TN73

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