有机小分子场效应晶体管的研究
发布时间：2019-01-21 17:48
【摘要】：自上世纪80年代以来,有机场效应晶体管作为一种新型有机半导体器件,因具有可修饰性强、材料种类多、制备简单、成本低廉,且特别适合于制备大面积的电子器件这些无机场效应管所不具备的优点,而越来越多地受到重视并取得了巨大的进展。近年来,实现对有机场效应晶体管性能的提高成为了一个重要的研究课题,这对于未来实现纯有机电路具有极其重要的意义。本论文针对提高小分子有机场效应晶体管性能展开了一系列研究。我们首先简单介绍了有机场效应晶体管的研究背景、研究意义、应用、发展过程中存在的问题、结构、常用材料、基本工作原理以及性能指标等方面内容,接着介绍了器件的制备流程及性能表征方法。论文主要研究内容分为三个方面,包括:1)采用MoO3修饰电极/有机半导体界面并利用掺杂层修饰有机半导体/绝缘层界面,探究各比例掺杂层对器件阈值电压的调控作用。性能最优的器件阈值电压从标准器件的-10.2 V下降到-1 V,载流子迁移率达到9×10-4 cm2/V?s。器件在130℃热板上进行退火25min后,阈值电压从标准器件的-10.2 V降到-2 V,器件的迁移率达到1.9×10-3 cm2/V?s。器件的寿命由一百小时提升到了两百小时左右。2)利用MoO3作为掺杂材料制备了基于并五苯的场效应晶体管。器件阈值电压由对应的标准器件的-5.1 V降到-2 V,载流子迁移率达到1×10-2 cm2/V?s。通过对并五苯蒸镀速率的调整制备出的器件阈值电压从标准器件的-5.1 V降到-1.7 V,器件的迁移率达到3×10-2 cm2/V?s。3)将含有MoO3和掺杂修饰层的基于酞菁铜以及基于并五苯的有机场效应晶体管器件分别应用到DNA生物传感检测中,分析实验结果并提出可供参照的研究方案。
[Abstract]:Since the 1980s, as a new type of organic semiconductor device, there have been airfield effect transistors, because of their strong modifiability, variety of materials, simple preparation and low cost. And it is especially suitable for fabricating large area electronic devices, which are not the advantages of inorganic FET, and more attention has been paid and great progress has been made. In recent years, improving the performance of field-effect transistors has become an important research topic, which is of great significance for the realization of pure organic circuits in the future. In this thesis, a series of studies have been carried out to improve the performance of small molecule airfield effect transistors. First of all, we briefly introduce the research background, significance, application, problems existing in the development process, structure, common materials, basic working principle and performance index of the FET. Then the fabrication process and performance characterization of the device are introduced. The main research contents are as follows: 1) using MoO3 modified electrode / organic semiconductor interface and doping layer to modify organic semiconductor / insulator interface, the effect of doping layer on the threshold voltage of the device is investigated. The threshold voltage of the device with optimal performance decreases from -10.2 V to -1 V, and the carrier mobility reaches 9 脳 10 ~ (-4) cm2/V?s.. After annealing on a hot plate at 130 鈩，
本文编号：2412878
[Abstract]:Since the 1980s, as a new type of organic semiconductor device, there have been airfield effect transistors, because of their strong modifiability, variety of materials, simple preparation and low cost. And it is especially suitable for fabricating large area electronic devices, which are not the advantages of inorganic FET, and more attention has been paid and great progress has been made. In recent years, improving the performance of field-effect transistors has become an important research topic, which is of great significance for the realization of pure organic circuits in the future. In this thesis, a series of studies have been carried out to improve the performance of small molecule airfield effect transistors. First of all, we briefly introduce the research background, significance, application, problems existing in the development process, structure, common materials, basic working principle and performance index of the FET. Then the fabrication process and performance characterization of the device are introduced. The main research contents are as follows: 1) using MoO3 modified electrode / organic semiconductor interface and doping layer to modify organic semiconductor / insulator interface, the effect of doping layer on the threshold voltage of the device is investigated. The threshold voltage of the device with optimal performance decreases from -10.2 V to -1 V, and the carrier mobility reaches 9 脳 10 ~ (-4) cm2/V?s.. After annealing on a hot plate at 130 鈩，
本文编号：2412878
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