多次回流下Au80Sn20微观演变及对半导体激光性能影响
发布时间：2019-01-24 19:51
【摘要】：研究了在多次回流下Au80Sn20焊层的微观演变机制及对半导体激光性能的影响,为采用自动化精密校准机械设备,多次回流实现激光叠阵自动化高精度封装提供技术支持。实验中,采用扫描电镜对不同回流次数下Au80Sn20焊层金属化合物(IMC)的SEM形貌特征进行了观察,并做EDS能谱组分分析。同时,对多次回流过程中各阶段进行光电性能测试,分析Au80Sn20焊料在多次回流焊接下的微观演变,以及对激光光电性能的影响。实验结果表明:对于相同芯片,同一封装形式,同批次的器件,在340℃,30s的回流焊接条件下,多次回流加热2~6次,即340℃间歇循环作用180s以内,Au80Sn20焊层演变主要在于微观相形态的变化,对激光光电性能影响不大;在加热到8~10次时,即340℃间歇循环作用300s左右,Au80Sn20焊层与芯片边界处出现柯肯达尔空洞;12~20次后,即340℃间歇循环作用至600s,柯肯达尔空洞融合变大,数量增多,致使半导体激光光电性能明显下降。
[Abstract]:The microcosmic evolution mechanism of Au80Sn20 welding layer under multiple reflux and its influence on semiconductor laser performance are studied, which provides technical support for automatic precision calibration of mechanical equipment and multiple backflow to realize automatic high-precision packaging of laser stack array. In the experiment, SEM was used to observe the SEM morphology of the metal compound (IMC) of Au80Sn20 welding layer under different reflux times, and the components of EDS were analyzed. At the same time, the optical and electrical properties of Au80Sn20 solder were tested in the process of multiple reflux, and the microcosmic evolution of Au80Sn20 solder under multiple reflux welding was analyzed, and the influence on the laser photoelectric performance was also analyzed. The experimental results show that for the same chip, the same package form and the same batch, under the condition of reflux welding at 340 鈩，
本文编号：2414791
[Abstract]:The microcosmic evolution mechanism of Au80Sn20 welding layer under multiple reflux and its influence on semiconductor laser performance are studied, which provides technical support for automatic precision calibration of mechanical equipment and multiple backflow to realize automatic high-precision packaging of laser stack array. In the experiment, SEM was used to observe the SEM morphology of the metal compound (IMC) of Au80Sn20 welding layer under different reflux times, and the components of EDS were analyzed. At the same time, the optical and electrical properties of Au80Sn20 solder were tested in the process of multiple reflux, and the microcosmic evolution of Au80Sn20 solder under multiple reflux welding was analyzed, and the influence on the laser photoelectric performance was also analyzed. The experimental results show that for the same chip, the same package form and the same batch, under the condition of reflux welding at 340 鈩，
本文编号：2414791
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