大直径区熔硅单晶的研究与制备
发布时间：2019-02-17 16:08
【摘要】：半导体技术的发展使硅单晶大直径化成为必然趋势,但6英寸及以上的大直径区熔硅单晶生长极为困难,且该技术国外对我国进行了严格的技术封锁,为打破这种局面,国内8英寸区熔硅单晶的自主研发势在必行。在此背景下,我们确立了本课题的研究目标,并制定了详细的实验方案设计,采用进口区熔设备和高纯多晶硅原生棒料,成功生长出8英寸区熔本征硅单晶,结合中子嬗变掺杂和热处理工艺,制备出满足半导体技术发展的8英寸区熔硅单晶。本论文对大直径区熔硅单晶生长技术以及中子辐照硅单晶热处理工艺进行了重点研究。大直径区熔本征硅单晶的生长难点为热应力导致硅单晶位错过多或开裂、多晶硅棒料化料过程中边缘出现硅刺、以及原始硅单晶径向电阻率分布(rail resistivity variation,简称RRV)不均。论文中首先研究了区熔炉加热线圈和保温桶等热场的优化设计,以及硅单晶生长速率、硅单晶转速、偏心量、工作频率等工艺参数的优化问题,找到了提高热场对称性,降低径向和轴向温度梯度,减小硅单晶热应力的方案,解决了硅单晶开裂的技术难题;其次,通过对化料工艺的研究,改善了化料效果,避免硅刺的产生,同时有效改善了区熔硅单晶RRV,为最终产品的RRV指标实现提供了有利保障;最后,通过对中子辐照后硅单晶的热处理工艺的研究,综合考虑热处理温度、时间和降温速率等重要参数,得到了最佳热处理工艺,成功消除了中子辐照损伤,使硅单晶电阻率恢复到目标水平,且保证了硅单晶少子寿命。通过以上研究,最终确定了8英寸区熔硅单晶的生长工艺和中子辐照单硅晶热处理工艺,成功研制出各项性能指标均满足目标需求的8英寸区熔硅单晶,具体性能参数如下:N型无位错硅单晶,直径202-203 mm,晶向100+20′,电阻率538Ω·cm,RRV平均4.2%,氧含量1×1016 at/cm3,碳含量1×1016 at/cm3,少子寿命861 us。
[Abstract]:The development of semiconductor technology makes the formation of large diameter silicon single crystal become an inevitable trend, but it is extremely difficult to grow large diameter zone fused silicon single crystal with 6 inches or more. In order to break this situation, the technology has been strictly blocked by foreign countries. It is imperative to develop 8-inch zone fused silicon single crystal in China. Under this background, we have established the research goal of this subject, and made the detailed experimental scheme design. By using the imported zone melting equipment and the high purity polysilicon primary rod, we have successfully grown the 8-inch zone melt intrinsic silicon single crystal. In combination with neutron transmutation doping and heat treatment, 8-inch zone fused silicon single crystals were prepared to meet the development of semiconductor technology. In this paper, the growth technology of large diameter zone fused silicon single crystal and the heat treatment process of neutron irradiation silicon single crystal were studied. The growth difficulty of large diameter zone melt intrinsic silicon single crystal is that thermal stress leads to too much dislocation or cracking of silicon single crystal, silicon burrs appear in the process of polysilicon bar material, and the radial resistivity distribution of original silicon single crystal is (rail resistivity variation, for short RRV. In this paper, the optimization design of heating coils and heat preservation buckets, and the optimization of silicon single crystal growth rate, silicon rotation speed, eccentricity and working frequency are studied, and the symmetry of the thermal field is improved. The scheme of reducing radial and axial temperature gradient and reducing thermal stress of silicon single crystal solves the technical problem of silicon crystal cracking. Secondly, through the study of the chemical technology, the material effect is improved, and the silicon spurs are avoided. At the same time, the zone fused silicon single crystal RRV, provides a favorable guarantee for the realization of the RRV index of the final product. Finally, by studying the heat treatment process of silicon single crystal after neutron irradiation and considering the important parameters such as heat treatment temperature, time and cooling rate, the optimum heat treatment process is obtained, and the neutron irradiation damage is successfully eliminated. The resistivity of silicon single crystal is restored to the target level, and the minority carrier lifetime of silicon single crystal is guaranteed. Through the above research, the growth process of 8-inch zone fused silicon single crystal and the heat treatment process of neutron irradiation single silicon crystal were determined. The specific parameters are as follows: N-type dislocation-free silicon single crystal, diameter 202-203 mm, crystal direction 10020g, resistivity 538 惟 cm,RRV average 4.2, oxygen content 1 脳 1016 at/cm3, carbon content 1 脳 1016 at/cm3, minority carrier lifetime 861 us.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
本文编号：2425349
[Abstract]:The development of semiconductor technology makes the formation of large diameter silicon single crystal become an inevitable trend, but it is extremely difficult to grow large diameter zone fused silicon single crystal with 6 inches or more. In order to break this situation, the technology has been strictly blocked by foreign countries. It is imperative to develop 8-inch zone fused silicon single crystal in China. Under this background, we have established the research goal of this subject, and made the detailed experimental scheme design. By using the imported zone melting equipment and the high purity polysilicon primary rod, we have successfully grown the 8-inch zone melt intrinsic silicon single crystal. In combination with neutron transmutation doping and heat treatment, 8-inch zone fused silicon single crystals were prepared to meet the development of semiconductor technology. In this paper, the growth technology of large diameter zone fused silicon single crystal and the heat treatment process of neutron irradiation silicon single crystal were studied. The growth difficulty of large diameter zone melt intrinsic silicon single crystal is that thermal stress leads to too much dislocation or cracking of silicon single crystal, silicon burrs appear in the process of polysilicon bar material, and the radial resistivity distribution of original silicon single crystal is (rail resistivity variation, for short RRV. In this paper, the optimization design of heating coils and heat preservation buckets, and the optimization of silicon single crystal growth rate, silicon rotation speed, eccentricity and working frequency are studied, and the symmetry of the thermal field is improved. The scheme of reducing radial and axial temperature gradient and reducing thermal stress of silicon single crystal solves the technical problem of silicon crystal cracking. Secondly, through the study of the chemical technology, the material effect is improved, and the silicon spurs are avoided. At the same time, the zone fused silicon single crystal RRV, provides a favorable guarantee for the realization of the RRV index of the final product. Finally, by studying the heat treatment process of silicon single crystal after neutron irradiation and considering the important parameters such as heat treatment temperature, time and cooling rate, the optimum heat treatment process is obtained, and the neutron irradiation damage is successfully eliminated. The resistivity of silicon single crystal is restored to the target level, and the minority carrier lifetime of silicon single crystal is guaranteed. Through the above research, the growth process of 8-inch zone fused silicon single crystal and the heat treatment process of neutron irradiation single silicon crystal were determined. The specific parameters are as follows: N-type dislocation-free silicon single crystal, diameter 202-203 mm, crystal direction 10020g, resistivity 538 惟 cm,RRV average 4.2, oxygen content 1 脳 1016 at/cm3, carbon content 1 脳 1016 at/cm3, minority carrier lifetime 861 us.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
【参考文献】
相关期刊论文 前1条
1 张继荣,薛佳伟,佟丽英;中子辐照CZ硅单晶热处理后的电阻率变化[J];半导体技术;2005年03期
，本文编号：2425349
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