IGBT功率模块的失效研究与键合线状态监测
发布时间：2019-02-23 13:14
【摘要】：国家能源战略的实施,促使多种新能源技术蓬勃发展,如电动汽车、列车牵引、航空电源、太阳能发电等,其中核心技术就是能量转换,而通常电力电子装置则是实现这些新技术的载体,因此装置的可靠性至关重要,因为一旦系统发生故障,且未能快速有效地监测故障并采取措施,便可能会造成重大损失。相关统计研究发现,影响电力电子系统可靠性的最主要组成部分之一就是功率器件,所以关于功率器件可靠性的研究课题已经成为研究的重点和热点。目前,国内外多以基于模型的仿真分析方法进行失效研究和状态监测。本课题则以典型IGBT功率模块为研究对象,通过实验从模块结构、温度特性、器件端部外特性以及状态监测方面进行研究,具体内容如下:①针对典型IGBT功率模块,从机械结构和物理结构入手,重点以热损伤理论分析模块的失效机理,主要包括:焊料层损伤失效机理和键合线故障失效机理。基于失效机理的分析,进一步探究IGBT功率模块的键合线故障,包括故障原因、故障特征、故障影响和键合线状态监测。②温度是造成键合线脱落故障的主要原因,也是键合线故障后最明显的故障特征,因此本研究通过对比实验,全面分析温度、稳态热阻抗与键合线状态的关系。③通过监测IGBT功率模块的键合线状态可以有效提高电力电子系统的可靠性,因此论文重点抓住键合线故障对模块内部寄生电容Cge和Cgc的影响,研究得出器件端部外特性Vge与键合线状态的关系,最后提出基于温度和Vge的键合线状态监测方案。研究表明:芯片表面结温和芯片中心对应于底板的温度均与键合线脱落根数落呈线性关系;键合线脱落故障不会造成模块的层结构损伤而使芯片到底板的稳态热阻抗增大。本文所提出的基于温度和Vge的键合线状态监测方案尽管精确度仍需提高,但是该方案无需拆封IGBT模块、电路结构简单、安全性高、成本低,具有较高的工程适用性。本文在理论和实验两个方面都做了研究,尤其是通过大量对比实验得出的键合线故障特征对于后续实现系统的故障诊断和状态监测具有重要的参考价值,同时所用到的实验原理和研究方法对于研究其他功率器件的可靠性也具有参考作用。
[Abstract]:The implementation of the national energy strategy has led to the vigorous development of many new energy technologies, such as electric vehicles, train traction, aviation power, solar power generation, and so on, among which the core technology is energy conversion. Usually, power electronic devices are the carriers to realize these new technologies, so the reliability of the devices is very important, because if the system fails and fails to monitor the failure quickly and effectively and take measures, it may cause great losses. It is found that one of the most important components affecting the reliability of power electronic systems is power devices, so the research on the reliability of power devices has become the focus and focus of the research. At present, failure research and state monitoring are mostly based on model-based simulation analysis methods at home and abroad. This topic takes typical IGBT power module as the research object, through the experiment from the module structure, the temperature characteristic, the device end part outside characteristic as well as the condition monitoring aspect carries on the research, the concrete content is as follows: 1 for the typical IGBT power module, Starting with the mechanical and physical structure, the failure mechanism of the module is analyzed with the thermal damage theory, including: the damage failure mechanism of solder layer and the failure mechanism of bond line fault. Based on the analysis of failure mechanism, this paper further explores the bonding line faults of IGBT power module, including the causes of the failure, the characteristics of the faults, the influence of the faults and the monitoring of the state of the bonding lines. 2 temperature is the main reason for the breakout of the bonding lines. It is also the most obvious fault feature after the bond line fault. Therefore, through comparative experiments, the temperature is analyzed comprehensively in this study. The relationship between steady-state thermal impedance and bonding line state. 3 the reliability of power electronic system can be improved effectively by monitoring the bonding line state of IGBT power module, so this paper focuses on the influence of bond line fault on parasitic capacitance Cge and Cgc in the module. The relationship between Vge and the state of bonding line is obtained. Finally, a scheme of monitoring the state of bonding line based on temperature and Vge is proposed. The results show that the temperature of the chip surface junction and the center of the chip are linearly related to the falling of the bonding line and the failure of the bond line shedding will not cause damage to the layer structure of the module and increase the steady-state thermal impedance of the chip board. Although the precision of temperature and Vge based bond-line state monitoring scheme proposed in this paper needs to be improved, the scheme does not need to unseal the IGBT module, the circuit structure is simple, the security is high, the cost is low, and the scheme has high engineering applicability. In this paper, both theoretical and experimental studies have been done, especially the bond line fault features obtained through a large number of comparative experiments have important reference value for the subsequent implementation of system fault diagnosis and state monitoring. At the same time, the experimental principles and research methods used in the study of the reliability of other power devices also have a reference role.
【学位授予单位】：天津理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8
本文编号：2428866
[Abstract]:The implementation of the national energy strategy has led to the vigorous development of many new energy technologies, such as electric vehicles, train traction, aviation power, solar power generation, and so on, among which the core technology is energy conversion. Usually, power electronic devices are the carriers to realize these new technologies, so the reliability of the devices is very important, because if the system fails and fails to monitor the failure quickly and effectively and take measures, it may cause great losses. It is found that one of the most important components affecting the reliability of power electronic systems is power devices, so the research on the reliability of power devices has become the focus and focus of the research. At present, failure research and state monitoring are mostly based on model-based simulation analysis methods at home and abroad. This topic takes typical IGBT power module as the research object, through the experiment from the module structure, the temperature characteristic, the device end part outside characteristic as well as the condition monitoring aspect carries on the research, the concrete content is as follows: 1 for the typical IGBT power module, Starting with the mechanical and physical structure, the failure mechanism of the module is analyzed with the thermal damage theory, including: the damage failure mechanism of solder layer and the failure mechanism of bond line fault. Based on the analysis of failure mechanism, this paper further explores the bonding line faults of IGBT power module, including the causes of the failure, the characteristics of the faults, the influence of the faults and the monitoring of the state of the bonding lines. 2 temperature is the main reason for the breakout of the bonding lines. It is also the most obvious fault feature after the bond line fault. Therefore, through comparative experiments, the temperature is analyzed comprehensively in this study. The relationship between steady-state thermal impedance and bonding line state. 3 the reliability of power electronic system can be improved effectively by monitoring the bonding line state of IGBT power module, so this paper focuses on the influence of bond line fault on parasitic capacitance Cge and Cgc in the module. The relationship between Vge and the state of bonding line is obtained. Finally, a scheme of monitoring the state of bonding line based on temperature and Vge is proposed. The results show that the temperature of the chip surface junction and the center of the chip are linearly related to the falling of the bonding line and the failure of the bond line shedding will not cause damage to the layer structure of the module and increase the steady-state thermal impedance of the chip board. Although the precision of temperature and Vge based bond-line state monitoring scheme proposed in this paper needs to be improved, the scheme does not need to unseal the IGBT module, the circuit structure is simple, the security is high, the cost is low, and the scheme has high engineering applicability. In this paper, both theoretical and experimental studies have been done, especially the bond line fault features obtained through a large number of comparative experiments have important reference value for the subsequent implementation of system fault diagnosis and state monitoring. At the same time, the experimental principles and research methods used in the study of the reliability of other power devices also have a reference role.
【学位授予单位】：天津理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8
【参考文献】
相关期刊论文 前4条
1 胡建辉;李锦庚;邹继斌;谭久彬;;变频器中的IGBT模块损耗计算及散热系统设计[J];电工技术学报;2009年03期
2 陈明;胡安;唐勇;汪波;;IGBT结温及温度场分布探测研究[J];电力电子技术;2011年07期
3 刘驯;姚小铭;;分立IGBT的封装技术研究[J];电子与封装;2013年04期
4 魏克新;杜明星;;基于传热反问题的绝缘栅双极型晶体管模块温度计算方法[J];吉林大学学报(工学版);2011年06期
相关博士学位论文 前2条
1 武一民;引线键合系统设计理论与关键技术[D];天津大学;2008年
2 杜明星;功率器件状态监测的关键问题研究[D];天津大学;2012年
相关硕士学位论文 前3条
1 付耀龙;IGBT的分析与设计[D];哈尔滨工业大学;2010年
2 沈刚;基于近似熵分析和小波变换的IGBT模块键合线故障特征分析[D];重庆大学;2012年
3 胡震;功率器件的故障诊断及疲劳寿命预测[D];天津理工大学;2014年
，本文编号：2428866
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