新型碱性抛光液各组分对铜化学机械平坦化性能的影响

发布时间：2019-02-24 17:40

【摘要】：随着集成电路特征尺寸的减小、晶圆尺寸的增大以及布线层的逐渐增多,加工晶圆过程中实现较高的材料去除速率、较小的片内非一致性(WIWNU)及较小的表面粗糙度已经成为铜化学机械抛光工艺的几大难点。采用正交实验法选取5组抛光液进行Cu CMP实验,系统研究了含有双氧水、脂肪醇聚氧乙烯醚(AEO)、FA/OⅠ型螯合剂与苯骈三氮唑(BTA)的碱性抛光液化学组分对铜去除速率、WIWNU的影响,并对铜CMP的各种变化规律做出机理分析。结果表明:采用pH值约为8.6,体积分数为3%的H_2O_2,质量分数为0.08%的非离子表面活性剂AEO与体积分数为1.5%的螯合剂的碱性抛光液,在12英寸(1英寸=2.54 cm)铜镀膜片抛光后有助于去除速率达到629.1 nm/min,片内非一致性达到4.7%,粗糙度达到1.88 nm。
[Abstract]:With the decrease of IC characteristic size, the increase of wafer size and the increase of wiring layer, the material removal rate is higher in the process of wafer processing. Smaller inhomogeneous (WIWNU) and smaller surface roughness have become some difficulties in copper chemical mechanical polishing process. Five groups of polishes were selected by orthogonal experiment to carry out Cu CMP experiment. The (AEO), containing hydrogen peroxide and fatty alcohol polyoxyethylene ether was studied systematically. The effect of FA/O type I chelating agent and benzotriazole (BTA) on the removal rate of copper and WIWNU of alkaline polishing solution was studied. The mechanism of the changes of copper CMP was analyzed. The results showed that the basic polishing solution of H _ 2O _ 2 with pH value of about 8.6 and volume fraction of 3%, Nonionic surfactant AEO with 0.08% mass fraction and chelating agent with 1.5% volume fraction was used. After 12 inch (1 inch = 2. 54 cm) copper plating sheet polishing, the removal rate is 629.1 nm/min, inconsistency is 4. 7%, roughness is 1. 88 nm..
【作者单位】：河北工业大学电子信息工程学院;河北工业大学微电子研究所;
【基金】：国家科技重大专项子课题资助项目(2016ZX02301003-004-007) 河北省自然科学基金青年基金资助项目(F2015202267) 河北工业大学优秀青年科技创新基金资助项目(2015007)
【分类号】：TN405

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