SiC厚膜快速外延生长刻蚀工艺研究
发布时间：2019-02-25 07:44
【摘要】：10kV以上高压功率器件的应用提出了高质量快速4H-SiC外延生长工艺要求。4°4H-SiC厚膜外延生长时,对于器件制备不利的三角缺陷和台阶聚并是常见问题,使用HCl气体作为含Cl化合物,研究了不同刻蚀工艺、不同刻蚀温度对于4H-SiC外延层质量的影响。采用1 620℃HCl气体刻蚀衬底5min,1 600℃外延生长的工艺,可以有效降低三角缺陷数量,同时避免台阶聚并的形成。通过刻蚀工艺,以平均55.2μm/h的外延速率生长了平均55.2μm厚的高质量4H-SiC外延层,三角缺陷数量1个/cm2,表面粗糙度0.167nm。
[Abstract]:The application of high voltage power devices above 10kV has put forward the requirement of high quality and fast 4H-SiC epitaxial growth process. 4 掳4H-SiC thick film epitaxial growth is a common problem for fabrication of unfavorable triangular defects and step agglomeration. The effect of different etching process and etching temperature on the quality of 4H-SiC epitaxial layer was studied by using HCl gas as Cl compound. The epitaxial growth of HCl substrate at 1 620 鈩，
本文编号：2429947
[Abstract]:The application of high voltage power devices above 10kV has put forward the requirement of high quality and fast 4H-SiC epitaxial growth process. 4 掳4H-SiC thick film epitaxial growth is a common problem for fabrication of unfavorable triangular defects and step agglomeration. The effect of different etching process and etching temperature on the quality of 4H-SiC epitaxial layer was studied by using HCl gas as Cl compound. The epitaxial growth of HCl substrate at 1 620 鈩，
本文编号：2429947
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2429947.html
