氢气环境下栅控双极晶体管电离损伤缺陷演化行为研究
发布时间：2019-02-28 13:19
【摘要】：本文以70 ke V低能电子和1 Me V高能电子为辐照源,研究了氢气环境下栅控横向PNP型(GLPNP)双极晶体管电离辐射损伤缺陷演化行为规律。采取原位测试电性能方法,并结合栅扫描技术(GS)、亚阈值扫描法(SS)、深能级瞬态谱(DLTS)及等温退火等手段,揭示了氢气对GLPNP型晶体管电离效应及退火效应的影响规律。试验结果表明,1 Me V高能电子和70 ke V低能电子辐照对GLPNP型晶体管造成的电离损伤规律是基本一致的。1 Me V高能电子和70 ke V低能电子辐照后,经氢气浸泡的GLPNP晶体管的电流增益退化更严重。通过综合对比分析GS、SS及DLTS测试结果表明,经过氢气浸泡的GLPNP型晶体管在辐照过程中会产生更多的电离辐射损伤缺陷,这是由于氢气会促进辐照过程中GLPNP晶体管氧化物俘获正电荷及界面态陷阱的形成。在相同的电离吸收剂量条件下,与70 ke V电子辐照相比,1 Me V电子辐照产生的氧化物俘获正电荷及界面态陷阱数量更多,对GLPNP晶体管造成的性能退化程度更严重。通过比较分析氧化物俘获正电荷和界面态陷阱浓度与少子寿命的内在联系可知,1 Me V高能电子产生的电离辐射损伤缺陷会减小发射结和中性基区中的少子寿命,导致GLPNP晶体管的复合电流增加。少子寿命的减小主要基于两种原因:一是由于氧化物俘获电荷在发射结表面累积,使空间耗尽区向发射极移动,导致少子寿命减小及复合电流增加;二是界面态数量的增加,会致使中性基区中少子寿命减小及复合电流增加。150℃等温退火试验表明,退火过程中的氢气可与界面态及氧化物俘获正电荷同时发生交互作用。在退火过程中氢气的存在促使GLPNP晶体管电离辐射诱导的氧化物俘获正电荷及界面态缺陷的恢复,加快GLPNP晶体管电流增益的恢复程度。
[Abstract]:In this paper, 70 ke V low energy electrons and 1 Me V high energy electrons are used as irradiation sources to study the evolution of damage defects in gate-controlled transverse (GLPNP) bipolar transistors under hydrogen atmosphere. By means of in-situ measurement of electrical properties and gate scanning technique (GS), sub-threshold scanning method (SS), deep-level transient spectrum (DLTS) and isothermal annealing are used. The effects of hydrogen on ionization effect and annealing effect of GLPNP transistor are revealed. The experimental results show that the ionization damage of 1 Me V high energy electron and 70 ke V low energy electron irradiation on GLPNP type transistor is basically the same. After 1 Me V high energy electron irradiation and 70 ke V low energy electron irradiation, the ionization damage of GLPNP type transistor is similar to that of 70 ke V low energy electron irradiation. The current gain degradation of hydrogen immersed GLPNP transistor is more serious. The results of GS,SS and DLTS tests show that there are more damage defects caused by ionizing radiation in the hydrogen immersed GLPNP transistor during irradiation. This is because hydrogen promotes the formation of oxide capture positive charges and interface state traps in GLPNP transistors during irradiation. Under the same ionizing absorption dose, compared with 70 ke V electron irradiation, the oxide capture positive charge and interface state trap produced by 1 Me V electron irradiation are more serious than that of 70 Me V electron irradiation, and the performance degradation of GLPNP transistor is more serious. By comparing and analyzing the intrinsic relationship between the trapped positive charge of oxide and the concentration of interface state trap and the lifetime of minority ions, we can see that the damage defects of ionizing radiation produced by 1 Me V high energy electron can reduce the lifetime of minority ions in the emission junction and neutral base region. The compound current of GLPNP transistor is increased. The decrease of minority carrier lifetime is mainly due to two reasons: one is that the oxide capture charge accumulates on the surface of the emission junction, which makes the space depletion region move towards the emitter, resulting in the decrease of minority ion lifetime and the increase of composite current; Second, the increase of the number of interface states will lead to the decrease of minority carrier lifetime and the increase of composite current in the neutral base region. The isothermal annealing test at 150 鈩，
本文编号：2431832
[Abstract]:In this paper, 70 ke V low energy electrons and 1 Me V high energy electrons are used as irradiation sources to study the evolution of damage defects in gate-controlled transverse (GLPNP) bipolar transistors under hydrogen atmosphere. By means of in-situ measurement of electrical properties and gate scanning technique (GS), sub-threshold scanning method (SS), deep-level transient spectrum (DLTS) and isothermal annealing are used. The effects of hydrogen on ionization effect and annealing effect of GLPNP transistor are revealed. The experimental results show that the ionization damage of 1 Me V high energy electron and 70 ke V low energy electron irradiation on GLPNP type transistor is basically the same. After 1 Me V high energy electron irradiation and 70 ke V low energy electron irradiation, the ionization damage of GLPNP type transistor is similar to that of 70 ke V low energy electron irradiation. The current gain degradation of hydrogen immersed GLPNP transistor is more serious. The results of GS,SS and DLTS tests show that there are more damage defects caused by ionizing radiation in the hydrogen immersed GLPNP transistor during irradiation. This is because hydrogen promotes the formation of oxide capture positive charges and interface state traps in GLPNP transistors during irradiation. Under the same ionizing absorption dose, compared with 70 ke V electron irradiation, the oxide capture positive charge and interface state trap produced by 1 Me V electron irradiation are more serious than that of 70 Me V electron irradiation, and the performance degradation of GLPNP transistor is more serious. By comparing and analyzing the intrinsic relationship between the trapped positive charge of oxide and the concentration of interface state trap and the lifetime of minority ions, we can see that the damage defects of ionizing radiation produced by 1 Me V high energy electron can reduce the lifetime of minority ions in the emission junction and neutral base region. The compound current of GLPNP transistor is increased. The decrease of minority carrier lifetime is mainly due to two reasons: one is that the oxide capture charge accumulates on the surface of the emission junction, which makes the space depletion region move towards the emitter, resulting in the decrease of minority ion lifetime and the increase of composite current; Second, the increase of the number of interface states will lead to the decrease of minority carrier lifetime and the increase of composite current in the neutral base region. The isothermal annealing test at 150 鈩，
本文编号：2431832
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