一种无电感高线性有源混频器的设计

发布时间：2019-02-28 18:43

【摘要】：提出了一种基于负阻退化技术的2.4 GHz高线性亚阈值混频器,该混频器相对于传统结构而言,增加了两个交叉耦合电容。由于该结构的内部负阻退化技术抵消了寄生电容,因而降低了寄生电容对增益和线性度的影响,改善了增益和线性度。采用基于Volterra级数的小信号模型,分析交叉耦合电容对于输入三阶交调点IIP_3和增益的影响。分析表明该方法确实能够改善IIP_3性能。采用TSMC 0.13μm CMOS工艺进行设计并流片,该芯片大小为0.22 mm×0.2 mm。芯片测试结果表明,该混频器在2.1 mW功耗的情况下,获得了13.4 dB的增益,并且IIP_3高达5.4 dBm。
[Abstract]:A 2.4 GHz high linear subthreshold mixer based on negative resistance degradation technique is proposed. Compared with the traditional structure, two cross coupled capacitors are added to the mixer. Because the internal negative resistance degradation technique of the structure counteracts the parasitic capacitance, the influence of the parasitic capacitance on the gain and linearity is reduced, and the gain and linearity are improved. A small signal model based on Volterra series is used to analyze the influence of cross-coupled capacitance on the input third-order intermodulation point IIP_3 and gain. The analysis shows that this method can improve the performance of IIP_3. The chip was designed by TSMC 0.13 渭 m CMOS process. The chip size is 0.22 mm 脳 0.2 mm.. The chip test results show that the mixer has a gain of 13.4 dB at 2.1 mW power consumption and a IIP_3 of up to 5.4 dBm..
【作者单位】：许昌学院电气(机电)工程学院;
【基金】：河南省教育厅科学技术研究重点项目(16A413013) 河南省科技攻关项目(172102210465) 许昌市科技发展计划项目(1502094) 许昌学院优秀青年骨干教师资助项目
【分类号】：TN773

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