源漏电极对底栅底接触有机薄膜晶体管性能影响的研究
发布时间：2019-03-07 14:36
【摘要】：有机薄膜晶体管近年来在研究中得到广泛的关注与发展,拥有制备简单、成本低、可溶液法制备、柔性可弯曲等诸多优点,并且随着有机材料种类的增多以及性能的提高,其在性能方面已经可以与传统的多晶硅晶体管不相上下。有机薄膜晶体管在智能卡、电子标签、传感器,尤其是在显示领域的应用具有很大的应用前景和发展潜力。因此对其进行深入的研究是十分值得的。本文基于一种新型的高分子环氧树脂类材料作为栅极绝缘层,研究了源漏电极对有机薄膜晶体管性能的影响。首先介绍了本文所基于的新型绝缘材料的组成,然后利用了MIM(金属-绝缘层-金属)的结构测试了这种聚合物材料的介电常数,测得其相对介电常数为4。随后针对绝缘材料中感光剂PAG290的配比浓度、烘烤和曝光时间以及单层和双层绝缘层结构对这种材料的的绝缘特性进行了优化。在感光剂按重百分比所占比重为2%,在190℃的温度下烘烤1小时,用波长为365nm,曝光功率为20 W/cm2曝光100秒时,该绝缘材料所表现出的漏电特性最佳,并且采用双层结构时,单位电场强度下的漏电特性最佳。其次,本文采用金(Au)作为源极和漏极的材料,并基于新型绝缘材料,通过实验研究对比了通过剥离法和湿刻法制备源极和漏极时对有机薄膜晶体管的性能产生的影响。当采用剥离法时,器件所能达到的最优迁移率为0.13 cm2/Vs,开关比为9.35×104,阈值电压为-6.17V;采用湿刻法时,器件所能达到的最优迁移率为0.21 cm2/Vs,开关比为2.12×105,阈值电压为-2.35V。造成这种差距的主要原因是两种不同工艺所制备出的源漏电极与半导体层接触的不同而引起的接触电阻的差异,接触电阻值相差最大时约为1.5个数量级。不过在器件性能上,湿刻法还是优于剥离法,所以介绍了一种新型的剥离技术,即双层光刻胶剥离技术,它可以很好的弥补单层光刻胶剥离法所造成的电极与有源层产生不良接触的现象。最后,本文介绍了在实验过程中所发现的在采用金作为源漏电极材料并通过湿刻法来制备时产生的问题,即沟道长度在30μm以下时,器件的迟滞现象较为明显,并且随着沟道长度的减小,该现象更加明显。这主要是由于金是一种高功函数材料,直接在本文所基于的新型绝缘材料上进行蒸镀,会导致有部分金进入到绝缘层中,造成无法刻蚀干净,使得沟道中有刻蚀残留,因此引发迟滞现象。随后通过实验换用了银(Ag)这种功函数相对较低的材料作为源极和漏极,发现迟滞现象得到缓解。并且通过银加金这种混合材料,利用银充当缓冲层以阻止金进入绝缘层中,再在此之上蒸镀金作为源漏电极,也可以很好的解决这种迟滞现象。
[Abstract]:In recent years, organic thin film transistors have been widely concerned and developed in recent years. They have many advantages, such as simple preparation, low cost, solution preparation, flexible bending and so on. And with the increase of organic materials and the improvement of their properties, the organic thin film transistors have many advantages. Its performance has been comparable to that of conventional polysilicon transistors. The application of organic thin film transistor in smart card, tag, sensor, especially in display field has great application prospect and development potential. Therefore, the in-depth study of it is worth it. In this paper, the influence of source and drain electrode on the performance of organic thin film transistor is studied based on a novel polymer epoxy resin as gate insulator. Firstly, the composition of the new insulating material based on this paper is introduced. Then the dielectric constant of the polymer material is measured by using the structure of MIM (Metal-insulating layer-Metal), and the relative dielectric constant of the polymer material is measured to be 4. The insulation characteristics of the insulating material were optimized according to the ratio concentration of PAG290, the baking and exposure time, and the single layer and double layer insulation structure. When the proportion of photosensitizer by weight is 2%, baking at 190 鈩，
本文编号：2436201
[Abstract]:In recent years, organic thin film transistors have been widely concerned and developed in recent years. They have many advantages, such as simple preparation, low cost, solution preparation, flexible bending and so on. And with the increase of organic materials and the improvement of their properties, the organic thin film transistors have many advantages. Its performance has been comparable to that of conventional polysilicon transistors. The application of organic thin film transistor in smart card, tag, sensor, especially in display field has great application prospect and development potential. Therefore, the in-depth study of it is worth it. In this paper, the influence of source and drain electrode on the performance of organic thin film transistor is studied based on a novel polymer epoxy resin as gate insulator. Firstly, the composition of the new insulating material based on this paper is introduced. Then the dielectric constant of the polymer material is measured by using the structure of MIM (Metal-insulating layer-Metal), and the relative dielectric constant of the polymer material is measured to be 4. The insulation characteristics of the insulating material were optimized according to the ratio concentration of PAG290, the baking and exposure time, and the single layer and double layer insulation structure. When the proportion of photosensitizer by weight is 2%, baking at 190 鈩，
本文编号：2436201
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