2微米波段低发散角瓦级GaSb基宽区量子阱激光器（英文）
发布时间：2019-03-16 08:32
【摘要】：通过在宽区GaSb基半导体激光器波导中引入鱼骨型微结构,实现了瓦级激光输出并且改善了侧向发散角.本文通过分析微结构的刻蚀深度对激光功率和远场特性的影响,研究并发现了微结构的引入可以明显的提高激光器输出功率,同时深刻蚀的微结构对降低模式数和侧向发散角有着更明显的改善作用.相比于未引入微结构的激光器,引入深刻蚀微结构的宽区激光器侧向95%功率定义的远场发散角降低了大约57%,并且实现了超过1.1 W的最大连续输出功率.
[Abstract]:The output of W-level laser is realized and the lateral divergence angle is improved by introducing the fish bone microstructure into the waveguide of GaSb-based semi-conductor laser in the wide region. In this paper, the influence of etching depth of microstructure on laser power and far-field characteristics is analyzed, and it is found that the introduction of microstructure can obviously improve the output power of laser. At the same time, the deep etched microstructure can improve the mode number and lateral divergence angle more obviously. Compared with the laser without microstructure, the far-field divergence angle defined by 95% lateral power of the wide-area laser with deep etching microstructure is reduced by 57%, and the maximum continuous output power of more than 1.1 W is achieved.
【作者单位】： 中国科学院长春光学精密机械与物理研究所;中国科学院大学;中国科学院半导体研究所;
【基金】：Supported by National Natural Science Foundation of China(61404138,61474119,61435012) the National Basic Research Program of China(2013CB64390303) Jilin Provincial Natural Science Foundation(20160101243JC and 20150520105JH) the International Science Technology Cooperation Program of China(2013DFR00730)
【分类号】：TN248.4
本文编号：2441101
[Abstract]:The output of W-level laser is realized and the lateral divergence angle is improved by introducing the fish bone microstructure into the waveguide of GaSb-based semi-conductor laser in the wide region. In this paper, the influence of etching depth of microstructure on laser power and far-field characteristics is analyzed, and it is found that the introduction of microstructure can obviously improve the output power of laser. At the same time, the deep etched microstructure can improve the mode number and lateral divergence angle more obviously. Compared with the laser without microstructure, the far-field divergence angle defined by 95% lateral power of the wide-area laser with deep etching microstructure is reduced by 57%, and the maximum continuous output power of more than 1.1 W is achieved.
【作者单位】： 中国科学院长春光学精密机械与物理研究所;中国科学院大学;中国科学院半导体研究所;
【基金】：Supported by National Natural Science Foundation of China(61404138,61474119,61435012) the National Basic Research Program of China(2013CB64390303) Jilin Provincial Natural Science Foundation(20160101243JC and 20150520105JH) the International Science Technology Cooperation Program of China(2013DFR00730)
【分类号】：TN248.4
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