GaN器件的特性及应用研究
发布时间：2019-03-17 20:07
【摘要】：摘要：随着电力电子技术的进步,小功率开关电源的发展方向趋于高频化与小型化,人们对其高效与高功率密度的需求日益强烈。作为新一代半导体器件,GaN(氮化镓)器件应运而生,并具有替代逐渐达到理论极限的Si(硅)功率半导体器件的趋势。近来,增强型GaN晶体管在电力电子领域得到推广,对于这种新型的第三代宽禁带器件,其特性与传统的SiMOSFET相似,但又存在差异。GaN晶体管理论上可以高频工作,并得到可观的效率。本文便旨在研究增强型GaN晶体管的特性,与SiMOSFET进行对比分析。最终以高效、小型化为目标,探究其在高频LLC谐振电路中的应用特性,研究高频化为电路带来的影响与效率优化方法。 本文的主要研究对象是EPC公司单体增强型GaN晶体管。本文首先介绍了GaN器件的发展与现状,并对其特性与优势进行总结,选取LLC谐振变换器作为增强型GaN器件应用特性的研究拓扑：其次研究了增强型GaN晶体管的静态特性与动态特性,与MOSFET进行对比分析,并对增强型GaN晶体管进行了特性测试;然后理论分析了杂散参数对高频驱动电路的影响,设计了适用于增强型GaN晶体管的高频驱动电路,并对其PCB布局进行了优化设计；理论分析了基于GaN晶体管的与基于MOSFET的200kHz LLC谐振变换器的电路元器件损耗,仿真验证了GaN晶体管损耗小的优势,进行了基于GaN晶体管的样机实验分析,并对输出二极管选型、死区时间及主电路板PCB布局进行优化；最后为减小样机体积、进一步高频化,基于优化后的电路板设计了GaN晶体管的500kHz LLC同步整流谐振变换器,对GaN晶体管的应用特性进行了仿真和实验验证,为提高电路效率,进行了优化变压器结构及死区时间等优化措施,并实验验证了措施的有效性。
[Abstract]:Abstract: with the development of power electronics technology, the development direction of small power switching power supply tends to be high frequency and miniaturization, and the demand for its high efficiency and high power density is increasingly strong. As a new generation semiconductor device, GaN (gallium nitride (Gallium nitride) device emerges as the times require and has the tendency of replacing Si (silicon) power semiconductor devices which gradually reach the theoretical limit. Recently, enhanced GaN transistors have been popularized in power electronics field. For this new type of third generation wide band gap devices, their characteristics are similar to those of traditional SiMOSFET, but there are differences. Gan transistors can work at high frequency theoretically. And get considerable efficiency. The purpose of this paper is to study the characteristics of enhanced GaN transistor and compare it with SiMOSFET. Finally, with the goal of high efficiency and miniaturization, the application characteristics of high-frequency LLC resonant circuit are explored, and the influence of high-frequency circuit and the optimization method of efficiency are studied. The main research object of this paper is EPC company's monomeric enhanced GaN transistor. In this paper, the development and current situation of GaN device are introduced, and its characteristics and advantages are summarized. The LLC resonant converter is selected as the research topology of the application characteristics of the enhanced GaN devices. Secondly, the static and dynamic characteristics of the enhanced GaN transistors are studied, compared with MOSFET, and the characteristics of the enhanced GaN transistors are tested. Then, the influence of spurious parameters on the high frequency driving circuit is analyzed theoretically, and the high frequency driving circuit suitable for the enhanced GaN transistor is designed, and its PCB layout is optimized. The circuit component loss of 200kHz LLC resonant converter based on GaN transistor and 200kHz LLC converter based on MOSFET is analyzed theoretically. The advantage of low loss of GaN transistor is verified by simulation. The prototype experiment based on GaN transistor is carried out, and the output diode is selected. The dead time and the PCB layout of the main circuit board are optimized. Finally, in order to reduce the size of the prototype and further increase the frequency, the 500kHz LLC synchronous rectifier resonant converter of GaN transistor is designed based on the optimized circuit board. The application characteristics of the GaN transistor are simulated and verified by experiments, in order to improve the efficiency of the circuit. The optimization measures such as optimal transformer structure and dead time are carried out, and the effectiveness of the measures is verified by experiments.
【学位授予单位】：北京交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303
本文编号：2442655
[Abstract]:Abstract: with the development of power electronics technology, the development direction of small power switching power supply tends to be high frequency and miniaturization, and the demand for its high efficiency and high power density is increasingly strong. As a new generation semiconductor device, GaN (gallium nitride (Gallium nitride) device emerges as the times require and has the tendency of replacing Si (silicon) power semiconductor devices which gradually reach the theoretical limit. Recently, enhanced GaN transistors have been popularized in power electronics field. For this new type of third generation wide band gap devices, their characteristics are similar to those of traditional SiMOSFET, but there are differences. Gan transistors can work at high frequency theoretically. And get considerable efficiency. The purpose of this paper is to study the characteristics of enhanced GaN transistor and compare it with SiMOSFET. Finally, with the goal of high efficiency and miniaturization, the application characteristics of high-frequency LLC resonant circuit are explored, and the influence of high-frequency circuit and the optimization method of efficiency are studied. The main research object of this paper is EPC company's monomeric enhanced GaN transistor. In this paper, the development and current situation of GaN device are introduced, and its characteristics and advantages are summarized. The LLC resonant converter is selected as the research topology of the application characteristics of the enhanced GaN devices. Secondly, the static and dynamic characteristics of the enhanced GaN transistors are studied, compared with MOSFET, and the characteristics of the enhanced GaN transistors are tested. Then, the influence of spurious parameters on the high frequency driving circuit is analyzed theoretically, and the high frequency driving circuit suitable for the enhanced GaN transistor is designed, and its PCB layout is optimized. The circuit component loss of 200kHz LLC resonant converter based on GaN transistor and 200kHz LLC converter based on MOSFET is analyzed theoretically. The advantage of low loss of GaN transistor is verified by simulation. The prototype experiment based on GaN transistor is carried out, and the output diode is selected. The dead time and the PCB layout of the main circuit board are optimized. Finally, in order to reduce the size of the prototype and further increase the frequency, the 500kHz LLC synchronous rectifier resonant converter of GaN transistor is designed based on the optimized circuit board. The application characteristics of the GaN transistor are simulated and verified by experiments, in order to improve the efficiency of the circuit. The optimization measures such as optimal transformer structure and dead time are carried out, and the effectiveness of the measures is verified by experiments.
【学位授予单位】：北京交通大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303
【参考文献】
相关期刊论文 前3条
1 李宝珠;;宽禁带半导体材料技术[J];电子工业专用设备;2010年08期
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3 陈志坚;林国庆;;半桥型LLC谐振变换器的建模和设计[J];电工电气;2010年05期
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