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基于提高有机电致发光器件发光特性的研究

发布时间:2019-03-22 06:57
【摘要】:有机电致发光器件因具有宽的可视角,重量轻,低能耗等优点,被认为是新一代照明和平板显示技术的候选者。经过近30年的研究,有机电致发光技术得到了飞速的发展,但是困扰有机电致发光技术的两大问题--稳定性和效率仍然很突出。为了突破效率问题,探索更加优良的器件工艺,本论文工作主要包含以下三部分内容:1.通过在有机发光二极管(OLED)的阳极与空穴传输层NPB(N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺)之间加入m-MTDATA(4,4',4''-Tris(N-3-methylpheny l-N-phenylamino)triphenylamine)作为缓冲层来研究缓冲层对器件性能的影响。制备了ITO/m-MTDATA(d nm)/NPB(40-d nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)结构的器件,研究不同m-MTDATA厚度对OLED发光亮度、电流密度、电流效率等性能的影响。实验发现,当缓冲层的厚度为15nm时,器件的启亮电压从未加缓冲层的13V降到了最低的9V,最大发光亮度从未加缓冲层的5900cd/m2增加到16300cd/m2,是原来的2.76倍。最高的电流效率也由未加缓冲层的最高1.8cd/A变为最高的3.5cd/A,是原来的1.94倍。作为对照,制备了结构为ITO/MoO3(15nm)/NPB(25nm)/Alq3(70nm)/LiF(0.5nm)/Al(40nm)的器件。在器件的ITO与NPB之间插入了厚度为15nm的MoO3缓冲层。与同厚度的m-MTDATA器件相比:插入MoO3缓冲层器件的启亮电压降低为8V,最大亮度为13320(cd/m2),最大电流密度为6030.74(A/m2),最大的电流效率为3.06(cd/A)。2.制备了厚度为40nm,以不同比例混合的DMAC-DPS和m-MTDATA混合薄膜,测试了在不同混合比例下薄膜的光致发光光谱和量子效率。通过测试发现当DMAC-DPS和m-MTDATA比例为2:1时,混合薄膜的量子效率达到了最大值为32.8%,以该混合薄膜作为发光层,制备了结构为ITO/m-MTDATA30(nm)/DMAC-DPS:m-MTDATA(40nm)/DMAC-DPS(30nm)/LiF(1nm)/Al(60nm)的电致发光器件。通过测试发现:当DMAC-DPS和m-MTDATA二者比例为2:1时,制备的发光器件在最大发光亮度,最大电流密度和最大电流效率方面均达到最大值。在上述三种器件的制备方法中,我们确定了制备有机电致发光器件的最佳工艺,为后期的工作提供了实验基础。3.开展了温度对TAPC:BC zVBi体系混合薄膜光致发光光谱的影响的研究。研究了TAPC:BCZVBi混合薄膜的表面形貌。TAPC、BCZVBi、TAPC:BCZVBi吸收谱和不同温度下的归一化光致发光光谱和光致发光光谱。发现随着温度的降低,发光强度增强,发光峰位红移。对比了TAPC、BCZVBi以及TAPC:BCZVBi混合薄膜的吸收特性和PL谱,发现混合薄膜的吸收峰与TAPC的吸收峰几乎在同一位置,原因是由于能量转移抑制了BCZVBi的吸收;混合薄膜有两个发光峰,一个与BCZVBi的主峰重合,我们认为是由BCZVBi单独贡献,另一个峰位则是由二者共同贡献。
[Abstract]:Organic light-emitting devices (OLEDs) are considered as candidates for the new generation of lighting and flat panel display technology because of their wide viewing angle, light weight and low energy consumption. After nearly 30 years of research, organic electroluminescence technology has been developed rapidly, but the stability and efficiency of the two major problems-stability and efficiency-are still outstanding. In order to break through the efficiency problem and explore better device technology, the work of this paper mainly includes the following three parts: 1. NPB (N, N-diphenyl-N, N-(1-naphthyl)-1, 1-biphenyl-4,4-diamine) was added between anode and hole transport layer NPB (N, N-diphenyl-N, N-(1-naphthyl)-1, 1-diphenyl-4,4-diamine) of organic light emitting diode (OLED). 4''-Tris (N-3-methylpheny l-N-phenylamino) triphenylamine) is used as buffer layer to study the effect of buffer layer on device performance. ITO/m-MTDATA (d nm) / NPB (40 nm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) devices were fabricated. The effects of m-MTDATA thickness on the luminance, current density and current efficiency of OLED were investigated. It is found that when the thickness of the buffer layer is 15nm, the on-off voltage of the device decreases to the lowest 9V, and the maximum luminance of the device without adding the buffer layer increases to 16300cdm2, which is 2.76 times as much as that of the original one. The on-off voltage of the device has been reduced to the lowest 9V when the buffer layer is not added to the buffer layer. The highest current efficiency is also changed from the highest 1.8cd/A without buffer layer to the highest 3.5 CD / A, which is 1.94 times as high as the original. As a contrast, ITO/MoO3 (15nm) / NPB (25nm) / Alq3 (70nm) / LiF (0.5nm) / Al (40nm) devices were fabricated. A MoO3 buffer layer with the thickness of 15nm is inserted between the ITO and the NPB of the device. Compared with m-MTDATA devices of the same thickness, the on-off voltage of the MoO3 buffer layer device is reduced to 8V, the maximum brightness is 13320 (cd/m2), and the maximum current density is 6030.74 (A/m2). The maximum current efficiency is 3.06 (cd/A) .2. The photoluminescence (PL) spectra and quantum efficiency of DMAC-DPS and m-MTDATA thin films with different mixing ratios were measured under different mixing ratios and the thickness of the films was 40 nm, and the photoluminescence spectra and quantum efficiency of the films were measured. It is found that when the ratio of DMAC-DPS to m-MTDATA is 2: 1, the quantum efficiency of the hybrid film reaches the maximum value of 32.8%, and the hybrid film is used as the luminous layer. Electroluminescent devices with the structure of ITO/m-MTDATA30 (nm) / DMAC-DPS:m-MTDATA (40nm) / DMAC-DPS (30nm) / LiF (1nm) / Al (60nm) were fabricated. It is found that when the ratio of DMAC-DPS to m-MTDATA is 2: 1, the maximum luminance, the maximum current density and the maximum current efficiency of the device reach the maximum value in the aspect of the maximum luminance, the maximum current density and the maximum current efficiency. Among the preparation methods of the above three devices, we have determined the best process of preparing organic electroluminescent devices, which provides the experimental basis for later work. 3. The effect of temperature on photoluminescence spectra of mixed TAPC:BC zVBi films was studied. The surface morphology, TAPC, BCZVBi,TAPC:BCZVBi absorption spectra, normalized photoluminescence spectra and photoluminescence spectra of TAPC:BCZVBi mixed films at different temperatures were studied. It is found that with the decrease of temperature, the intensity of luminescence increases and the position of luminescence peak shifts red. The absorption characteristics and PL spectra of TAPC,BCZVBi and TAPC:BCZVBi mixed films were compared. It was found that the absorption peaks of the mixed films were almost the same as those of TAPC films, because the energy transfer inhibited the absorption of BCZVBi. The mixed films have two emission peaks, one coincident with the main peak of BCZVBi, which we think is contributed by BCZVBi alone and the other peak position by both.
【学位授予单位】:聊城大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN383.1

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