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石英陀螺Sigma-Delta带通调制器的设计

发布时间:2019-03-29 06:25
【摘要】:近年来半导体行业迅猛发展使各类电子产品性能得到了质的飞跃,使国防科技力量和人民生活质量都有了很大的提升。虽然国内半导体行业也在突飞猛进,但对于一些核心芯片的研究却始终未能有突破性成果。信号链包括数字信号处理部分与模拟接口电路部分,随着前者信号处理能力日益提升,后者已然成为约束信号链性能上升的瓶颈。当前MEMS传感器在军民两用中都扮演着重要的角色,石英陀螺仪为其重要分支。Sigma-Delta ADC作为传感器系统中重要的模拟接口电路组成部分,影响着整个石英陀螺仪的性能参数。其中调制器作为ADC中核心模块单元,研制出高指标的调制器有着重要意义。调制器包括低通型与带通型这两种功能不同的类别。当前在信号调制领域中,大部分科研工作者对低通调制器研究的针对性较强,而带通调制器的研究相比之下就较为匮乏。本设计结合实验室石英陀螺仪传感器的项目需要,以带通型代替低通型作为ADC中的模拟前端调制器,对其进行了相应研究并让设计的创新性有所提升。本课题中带通型调制器基于低通转化为带通的理论基础来设计,由基本低通型转化而来。本文设计思路是首先将带通型调制器在Simulink中完成系统级模型建立与仿真,确保模型可行性后再对非理想因素研究分析。然后在0.35μm CMOS制造工艺、电源电压±2.5V的环境下搭建系统整体电路、仿真验证、版图绘制,其主要模块单元为谐振器、全差分运放、一位量化器、不交叠时钟产生电路等。该带通调制器具有通带中心频率可控功能,可根据输入的数字逻辑电平来调节,并且能够根据数字逻辑电平的输入值来精确地控制通带中心频率在采样频率的1/6、1/4、1/3处,通带宽度为200Hz。当采样频率fs=64k Hz时,令其具有不同通带中心频率并进行仿真。前仿真结果表明,该带通型调制器在不同通带中心频率下信噪比均值约80d B,输入动态范围为70.88d B,最大输入信号幅度为-3.1d BFs。后仿真结果显示信噪比约60d B,输入动态范围为59.08dB,且温度特性较稳定,芯片总面积为5.017mm~2。
[Abstract]:In recent years, the rapid development of semiconductor industry has made a qualitative leap in the performance of all kinds of electronic products, so that the national defense science and technology strength and the quality of life of the people have been greatly improved. Although the domestic semiconductor industry is also advancing by leaps and bounds, the research on some core chips has never made a breakthrough. The signal chain includes the digital signal processing part and the analog interface circuit. With the improvement of the former's signal processing ability, the latter has become the bottleneck of restricting the performance of the signal chain. At present, MEMS sensors play an important role in both military and civil use, and quartz gyroscope is an important branch of it. Sigma-Delta ADC, as an important part of analog interface circuit in sensor system, affects the performance parameters of the whole quartz gyroscope. As the core module unit of ADC, it is of great significance to develop a high index modulator. Modulators include two different types of functions, low-pass and band-pass. At present, in the field of signal modulation, most researchers focus on the research of low-pass modulator, but the research of band-pass modulator is less than that of low-pass modulator. According to the project requirement of the quartz gyroscope sensor in the laboratory, the band-pass model is used as the analog front-end modulator in ADC instead of the low-pass type, and the innovation of the design is improved. In this paper, the band-pass modulator is designed based on the theory of low-pass conversion to band-pass, which is derived from the basic low-pass modulator. The design idea of this paper is to establish and simulate the system-level model of the bandpass modulator in Simulink to ensure the feasibility of the model and then analyze the non-ideal factors. Then the whole circuit of the system is built in 0.35 渭 m CMOS manufacturing process, the power supply voltage is 卤2.5 V, the simulation verification, layout drawing, its main module unit is resonator, fully differential amplifier, one-bit quantizer, non-overlapping clock generation circuit, and so on. The main modules of the circuit are resonator, full differential amplifier, one-bit quantizer, non-overlapping clock generation circuit and so on. The band-pass modulator has the function of controlling the center frequency of the pass band, which can be adjusted according to the input digital logic level. According to the input value of the digital logic level, the central frequency of the pass band can be precisely controlled at 1? 6, 1? 4, 1? 3 of the sampling frequency, and the band width is 200 Hz. When sampling frequency fs=64k Hz, make it have different pass band center frequency and carry on simulation. The simulation results show that the average SNR of the bandpass modulator is about 80 dB at different central frequencies, the input dynamic range is 70.88 dB, and the maximum input signal amplitude is-3.1 d BFs.. The simulation results show that the SNR is about 60dB, the input dynamic range is 59.08dB, and the temperature characteristic is stable. The total area of the chip is 5.017mm 路m ~ (- 2).
【学位授予单位】:哈尔滨工业大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN761

【参考文献】

相关博士学位论文 前2条

1 李迪;高性能sigma-delta ADC的设计与研究[D];西安电子科技大学;2010年

2 吴笑峰;高精度sigma-delta ADC的研究与设计[D];西安电子科技大学;2009年

相关硕士学位论文 前2条

1 闫冬;数字陀螺Sigma-Delta调制器的设计[D];哈尔滨工业大学;2016年

2 贾政亚;低压微功耗CMOS运算放大器的研究与设计[D];电子科技大学;2005年



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