氧化钒薄膜微结构与噪声性能研究

发布时间：2019-04-01 20:28

【摘要】：非制冷红外探测器的应用之广泛使得其发展非常迅速。热敏薄膜材料的电阻温度系数和噪声性能是决定非制冷红外探测器性能参数的关键因素。其其中,氧化钒薄膜的噪声是非制冷红外探测器的重要噪声来源,对氧化钒薄膜噪声的研究是对研制高性能红外探测器不可或缺的重要任务。本文围绕氧化钒热敏薄膜噪声性能与微结构的关系,采用反应磁控溅射沉积方法制备了掺杂氧化钒薄膜,借助于原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射(XRD)、Raman谱分析、电子顺磁共振(EPR)等分析表征手段对薄膜的表面形貌及微结构进行分析;以自行设计并搭建的热敏薄膜噪声系统,对不同微结构的氧化钒薄膜进行噪声性能测试与分析,以探索氧化钒热敏薄膜噪声性能与微结构的关系,所取得的主要结果如下:(1)针对非制冷红外探测器用热敏薄膜材料噪声测试要求,采用美国NI公司的多通道数据采集卡、Lab View软件和电磁热屏蔽系统,设计并搭建了热敏薄膜低频噪声测试系统,验证测试表明,基于该测试系统的测试结果重复好,这保证了噪声评价的可靠性。(2)制备了不同基片温度下的氧化钒热敏薄膜,研究了基片温度对氧化钒薄膜微结构及噪声等性能的影响机制。随着基片温度升高,氧化钒薄膜的颗粒尺度增大,且颗粒尺度的分布范围变窄,薄膜中的微结构有序度增加,薄膜中微结构的稳定性增加;这导致薄膜的噪声参数降低。(3)研究了掺Y对非晶氧化钒薄膜微结构和噪声性能的影响机制。掺Y后氧化钒薄膜颗粒变小,表面均匀性更好,掺Y也降低了氧化钒薄膜的短程有序度。同时,掺Y使得氧化钒薄膜的噪声参数降低,这意味着掺Y氧化钒薄膜可能是优良的热敏薄膜材料。(4)首次探索了掺Ag对氧化钒薄膜的微结构和性能的影响。一方面掺Ag后氧化钒薄膜颗粒变大,粗糙度增大,峰谷值明显增大,在电学特性上表现为薄膜方阻降低,噪声增加。另一方面,掺Ag后氧化钒薄膜的相变幅度降低,随着Ag元素掺杂量的增加,半导体相氧化钒薄膜的方阻降低,并且掺杂量达到一定程度后氧化钒薄膜相变特性消失。
[Abstract]:The application of non-refrigeration infrared detectors has made the development very rapid. The resistance temperature coefficient and noise performance of the heat-sensitive film material are the key factors to determine the performance parameters of the non-refrigeration infrared detector. The noise of the oxide film is an important source of noise of the non-refrigeration infrared detector, and the research on the noise of the oxide film is an indispensable task for the development of the high-performance infrared detector. In this paper, the relationship between the noise performance and microstructure of the redox-sensitive film is discussed, and the doped oxide film is prepared by the method of reactive magnetron sputtering. By means of the atomic force microscope (AFM), the scanning electron microscope (SEM), the X-ray diffraction (XRD) and the Raman spectrum analysis, The surface morphology and microstructure of the thin film were analyzed by electron paramagnetic resonance (EPR) and the like. The noise performance of the film was measured and analyzed by a self-designed and built-up thermal film noise system. in ord to explore that relationship between the noise performance and the microstructure of the redox-sensitive film, the main results are as follows: (1) the multi-channel data acquisition card, the Lab View software and the electromagnetic heat shield system of the NNI company are adopted for the noise test requirement of the heat-sensitive film material for the non-refrigeration infrared detector, The test system of the low-frequency noise of the heat-sensitive film is designed and built, and the test results show that the test result of the test system is good, which guarantees the reliability of the noise evaluation. (2) The mechanism of the influence of the substrate temperature on the microstructure and noise of the oxide film was studied. As the temperature of the substrate increases, the particle size of the oxide film is increased, and the distribution range of the particle size is narrow, and the degree of the micro-structure in the film is increased, and the stability of the microstructure in the film is increased; and this results in a reduction in the noise parameter of the film. (3) The effect of Y on microstructure and noise performance of amorphous oxide film was studied. After Y-doping, the film grain of the oxide film is small, the surface uniformity is better, and Y also reduces the short-range order of the oxide film. At the same time, the Y-doped oxide film has a reduced noise parameter, which means that the Y-doped oxide film may be an excellent heat-sensitive film material. (4) The effect of Ag on the microstructure and properties of the oxide film was first explored. On the one hand, after the Ag is doped, the film grain of the oxide film is increased, the roughness is increased, the peak-to-valley value is obviously increased, and the electric characteristic shows that the film square resistance is reduced and the noise is increased. On the other hand, the phase-change amplitude of the oxide-doped thin film after Ag-doping is reduced, and as the doping amount of the Ag element is increased, the square resistance of the semiconductor-phase-oxide-doped thin film is reduced, and the doping amount reaches a certain degree, and the phase-change characteristic of the oxide-doped thin film disappears.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN215

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