NMOS晶体管总剂量辐照效应的电流模型研究
发布时间：2019-04-01 21:25
【摘要】：随着航空航天技术的飞速发展,越来越多的由CMOS器件和CMOS集成电路构成的电子设备运用于航天技术当中,但在空间环境当中,存在着大量的空间粒子和射线,会增加电子设备失效的风险。为提高电子设备的使用寿命和可靠性能,对抗辐照技术进行更加深入的研究变得异常的重要。本文以NMOS晶体管在电离辐照总剂量效应(Total Ionizing Dose,TID)下的辐照缺陷和电流模型为研究课题,具体研究了辐照缺陷(固定电荷和界面态陷阱)和电流模型的建立方法,并对模型进行了验证与分析。本文基于总剂量辐照理论,分析了总剂量辐照效应对NMOS晶体管电学特性的影响。根据电路的实际应用情况,对栅极零偏置电压条件下晶体管的辐照性能模型进行研究,设计出了零偏置条件下的辐照实验方案。实验分别采用环形栅和普通栅结构以及不同栅宽的NMOS管进行总剂量辐照。通过对实验结果的深入分析,得出总剂量、栅极结构、宽长比对晶体管的亚阈值特性和输出特性曲线的影响。并采用McWhorter-Winokur的方法对辐照产生的缺陷进行了提取,而此方法提取不同宽度的NMOS晶体管的辐照缺陷时,其结果与宽度存在相关性,通过对提取原理的分析,本文提出了选取基本宽度作为提取的标准以方便辐照电流模型的建立。本文首先采用了总剂量辐照效应下,MIS(Mental-Insulator-Semiconductor)结构的辐照缺陷的建模方法,并对模型中电势的边界条件进行了详细的讨论,即使栅极处在零偏置条件下,由于不同材料之间存在功函数差,仍然会在氧化层中产生附加电场,并影响到整个辐照缺陷的形成,并在模型中加以考虑。然后通过MATLAB程序对模型进行数值求解,并讨论了不同栅极偏压,总剂量,氧化层厚度对固定电荷面密度和界面态密度以及阈值电压的影响。另外,实验所采用的LOCOS(Local Oxidation of Silicon)工艺普通栅NMOS管,辐照后主要关态泄漏电流存在于鸟嘴区,而此处氧化层的厚度在不断变化,将给辐照电流的计算带来一定的复杂度。基于此,本文提出将鸟嘴区的辐照缺陷等效到栅氧化层中的方法,以减少对电流计算的复杂程度。最后本文采用提出的辐照缺陷模型和缺陷等效模型以及辐照电流模型的求解结果对文献中的实验数据和本文的实验数据进行了很好的拟合。
[Abstract]:With the rapid development of aerospace technology, more and more electronic devices composed of CMOS devices and CMOS integrated circuits are used in space technology, but there are a lot of space particles and rays in the space environment. Increases the risk of failure of electronic equipment. In order to improve the service life and reliability of electronic equipment, it is very important to carry out more in-depth research on anti-irradiation technology. In this paper, the radiation defects and current models of NMOS transistors under total dose effect of ionizing irradiation (Total Ionizing Dose,TID) are studied, and the methods of establishing radiation defects (fixed charge and interface state traps) and current models are studied in detail. The model is verified and analyzed. Based on the theory of total dose radiation, the effect of total dose irradiation on the electrical properties of NMOS transistor is analyzed in this paper. According to the practical application of the circuit, the radiation performance model of the transistor under the condition of zero bias voltage of gate is studied, and the irradiation experiment scheme under the condition of zero bias is designed. The total dose radiation of ring gate and common gate structure and NMOS tube with different gate width were used in the experiment. The effects of total dose, gate structure and width-length ratio on the sub-threshold characteristics and output characteristic curves of the transistor are obtained by deep analysis of the experimental results. The defects produced by irradiation are extracted by McWhorter-Winokur method. When the irradiated defects of NMOS transistors with different widths are extracted by this method, there is a correlation between the results and the width. Through the analysis of the extraction principle, the radiation defects of NMOS transistors with different widths are extracted by this method. In this paper, the basic width is selected as the extraction standard to facilitate the establishment of radiation current model. In this paper, the modeling method of radiation defects of, MIS (Mental-Insulator-Semiconductor) structure under total dose radiation effect is first adopted, and the boundary conditions of the potential in the model are discussed in detail, even if the gate is in zero bias condition. Due to the difference of work function between different materials, additional electric field will still be produced in the oxide layer, which will affect the formation of the whole irradiation defect and be considered in the model. Then the model is solved numerically by MATLAB program, and the effects of different gate bias, total dose and oxide thickness on the fixed charge surface density, interface state density and threshold voltage are discussed. In addition, the main leakage current of the common gate NMOS tube in the LOCOS (Local Oxidation of Silicon) process after irradiation exists in the bird's mouth region, and the thickness of the oxide layer is constantly changing here, which will bring a certain complexity to the calculation of the radiation current. Based on this, this paper presents a method to reduce the complexity of current calculation by equivalent the irradiation defects in the bird's mouth to the gate oxide. Finally, the results of radiation defect model, defect equivalent model and radiation current model are used to fit the experimental data in the literature and the experimental data in this paper.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
[Abstract]:With the rapid development of aerospace technology, more and more electronic devices composed of CMOS devices and CMOS integrated circuits are used in space technology, but there are a lot of space particles and rays in the space environment. Increases the risk of failure of electronic equipment. In order to improve the service life and reliability of electronic equipment, it is very important to carry out more in-depth research on anti-irradiation technology. In this paper, the radiation defects and current models of NMOS transistors under total dose effect of ionizing irradiation (Total Ionizing Dose,TID) are studied, and the methods of establishing radiation defects (fixed charge and interface state traps) and current models are studied in detail. The model is verified and analyzed. Based on the theory of total dose radiation, the effect of total dose irradiation on the electrical properties of NMOS transistor is analyzed in this paper. According to the practical application of the circuit, the radiation performance model of the transistor under the condition of zero bias voltage of gate is studied, and the irradiation experiment scheme under the condition of zero bias is designed. The total dose radiation of ring gate and common gate structure and NMOS tube with different gate width were used in the experiment. The effects of total dose, gate structure and width-length ratio on the sub-threshold characteristics and output characteristic curves of the transistor are obtained by deep analysis of the experimental results. The defects produced by irradiation are extracted by McWhorter-Winokur method. When the irradiated defects of NMOS transistors with different widths are extracted by this method, there is a correlation between the results and the width. Through the analysis of the extraction principle, the radiation defects of NMOS transistors with different widths are extracted by this method. In this paper, the basic width is selected as the extraction standard to facilitate the establishment of radiation current model. In this paper, the modeling method of radiation defects of, MIS (Mental-Insulator-Semiconductor) structure under total dose radiation effect is first adopted, and the boundary conditions of the potential in the model are discussed in detail, even if the gate is in zero bias condition. Due to the difference of work function between different materials, additional electric field will still be produced in the oxide layer, which will affect the formation of the whole irradiation defect and be considered in the model. Then the model is solved numerically by MATLAB program, and the effects of different gate bias, total dose and oxide thickness on the fixed charge surface density, interface state density and threshold voltage are discussed. In addition, the main leakage current of the common gate NMOS tube in the LOCOS (Local Oxidation of Silicon) process after irradiation exists in the bird's mouth region, and the thickness of the oxide layer is constantly changing here, which will bring a certain complexity to the calculation of the radiation current. Based on this, this paper presents a method to reduce the complexity of current calculation by equivalent the irradiation defects in the bird's mouth to the gate oxide. Finally, the results of radiation defect model, defect equivalent model and radiation current model are used to fit the experimental data in the literature and the experimental data in this paper.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
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9 刘以f，
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