基于GaN功率器件的热仿真技术研究
发布时间：2019-04-10 18:13
【摘要】：针对大功率器件散热瓶颈问题,基于GaN功率芯片,利用有限元分析方法开展了芯片近结区热特性模拟方法的研究。建立了芯片近结区散热能力仿真评估的三维理论模型,系统地研究了不同的初始条件、边界条件、晶格热效应及结构理论假设等因素对仿真精度的影响,分析了理论建模因素对计算结果的影响的原因。同时采用红外热成像仪对不同功率下的GaN芯片结温进行测试验证,模拟计算的结果和测试值的偏差在10%之内,表明合理建模的热仿真技术可有效评估器件散热能力。
[Abstract]:In order to solve the problem of heat dissipation bottleneck of high power devices, a finite element analysis (FEM) method was used to simulate the thermal characteristics of the near junction region based on the GaN power chip. A three-dimensional theoretical model for the simulation and evaluation of the heat dissipation capacity in the near junction region of the chip is established, and the effects of different initial conditions, boundary conditions, lattice thermal effects and structural theoretical assumptions on the simulation accuracy are systematically studied. The causes of the influence of theoretical modeling factors on the calculation results are analyzed. At the same time, infrared thermal imager is used to test and verify the junction temperature of GaN chip under different power. The deviation between the simulation result and the test value is less than 10%, which shows that the reasonable modeling thermal simulation technology can effectively evaluate the thermal dissipation ability of the device.
【作者单位】： 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所;固体微结构物理国家实验室南京大学;
【基金】：国家自然科学基金资助项目(61474101,61504125) 微波毫米波单片集成和模块电路重点实验室基金项目(6142803030203)
【分类号】：TN303
，
本文编号：2456014
[Abstract]:In order to solve the problem of heat dissipation bottleneck of high power devices, a finite element analysis (FEM) method was used to simulate the thermal characteristics of the near junction region based on the GaN power chip. A three-dimensional theoretical model for the simulation and evaluation of the heat dissipation capacity in the near junction region of the chip is established, and the effects of different initial conditions, boundary conditions, lattice thermal effects and structural theoretical assumptions on the simulation accuracy are systematically studied. The causes of the influence of theoretical modeling factors on the calculation results are analyzed. At the same time, infrared thermal imager is used to test and verify the junction temperature of GaN chip under different power. The deviation between the simulation result and the test value is less than 10%, which shows that the reasonable modeling thermal simulation technology can effectively evaluate the thermal dissipation ability of the device.
【作者单位】： 微波毫米波单片集成和模块电路重点实验室南京电子器件研究所;固体微结构物理国家实验室南京大学;
【基金】：国家自然科学基金资助项目(61474101,61504125) 微波毫米波单片集成和模块电路重点实验室基金项目(6142803030203)
【分类号】：TN303
，
本文编号：2456014
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