碱性抛光液中表面活性剂对铜钽的电偶腐蚀

发布时间：2019-04-26 20:31

【摘要】：在阻挡层化学机械抛光(CMP)过程中,阻挡层材料钽(Ta)易与铜(Cu)发生电偶腐蚀。针对这一问题,通过电化学分析方法研究了碱性抛光液中非离子表面活性剂对铜钽腐蚀电位的影响;通过CMP实验研究了非离子表面活性剂对铜钽去除速率的影响。结果表明,随着非离子表面活性剂体积分数增加至9%,铜钽的腐蚀电位均降低。最终确定最佳非离子表面活性剂的体积分数为6%。此时,在静态条件下,铜钽电极之间的电位差为1 m V;在动态条件下,铜钽电极之间的电位差为40 m V,可极大地减弱铜钽电偶腐蚀。同时,铜钽的去除速率分别为47 nm·min-1和39 nm·min-1,铜钽去除速率选择比满足阻挡层CMP要求。
[Abstract]:In the process of chemical mechanical polishing (CMP) of barrier layer, tantalum (Ta) is easy to corrode with copper (Cu). In order to solve this problem, the influence of Nonionic surfactant on the corrosion potential of copper and tantalum in alkaline polishing solution was studied by electrochemical analysis, and the effect of Nonionic surfactant on copper-tantalum removal rate was studied by CMP experiment. The results show that the corrosion potential of copper and tantalum decreases with the volume fraction of Nonionic surfactant increasing to 9%. The optimal volume fraction of Nonionic surfactant was determined to be 6%. At this time, the potential difference between copper and tantalum electrodes is 1 MV under static condition and 40 MV between copper and tantalum electrodes under dynamic condition, which can greatly weaken the copper-tantalum couple corrosion. At the same time, the removal rates of copper and tantalum are 47 nm 路min-1 and 39 nm 路min-1, respectively. The ratio of copper to tantalum removal rate meets the requirements of barrier layer CMP.
【作者单位】：河北工业大学电子信息工程学院;河北工业大学天津市电子材料与器件重点实验室;
【基金】：河北省自然科学基金资助项目(E2014202147);河北省自然科学基金青年基金资助项目(F2015202267) 天津市自然科学基金资助项目(16JCYCBJC16100) 河北工业大学优秀青年科技创新基金资助项目(2015007)
【分类号】：TN305.2

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