基于Diels-Alder反应的可交联空穴传输材料的合成及其在聚合物发光二极管中的应用

发布时间：2019-04-26 23:16

【摘要】：设计合成了一种侧链含呋喃的可交联共轭聚合物空穴传输材料聚{2,7-[9,9-二(6-(2-呋喃甲氧基)己基)芴]-共-4,4′-(4″-丁基)三苯胺}(P1)和侧链含马来酰亚胺的共轭小分子交联剂N,N′-二[4-(6-马来酰亚氨基己基)苯基]-N,N′-二苯基联苯二胺(M1).基于呋喃和马来酰亚胺间Diels-Alder反应,P1和M1共混膜可在150°C下热处理快速交联形成具有优异抗溶剂性的薄膜,同时薄膜的光电性能可以通过控制P1和M1的共混比例进行有效调节.器件研究结果表明,基于P1+M1交联的薄膜表现出了优异的空穴传输、电子阻挡性质,应用于聚合物发光二极管时可有效避免由传统空穴传输材料聚3,4-亚乙二氧基噻吩/聚苯乙烯磺酸(PEDOT:PSS)作为单一界面层引起的发光淬灭现象,使相应器件性能得到大幅提升.当M1添加量为10%时,相关器件表现出了最佳的器件性能,器件的最大电流效率为9.0 cd A~(-1),最大亮度为35681 cd m~(-2),启亮电压为3.2 V.
[Abstract]:A kind of crosslinked conjugated polymer hole transport material containing furan was designed and synthesized. Poly {2,7-[9,9-bis (6-(2-(2-furyl methoxy) hexyl) fluorene]-total-4,4-(4 "- Ding Ji) triphenylamine} (4"-Ding Ji) triphenylamine} (2-[9,9-bis (6-(2-furyl methoxy) hexyl) fluorene]-total P1) and side chain conjugated small molecular crosslinker N containing maleimide, N-di-[4-(6-maleimino-hexyl) phenyl]-N, N-diphenyl-biphenylenediamine (M1). Based on the Diels-Alder reaction between furan and maleimide, P1 and M1 blend films can be rapidly crosslinked at 150 掳C to form excellent solvent-resistant films. At the same time, the photoelectric properties of the films can be effectively adjusted by controlling the blending ratio of P1 and M1. The results show that the films based on P1M1 crosslinked exhibit excellent hole transport and electron barrier properties. When applied to polymer light emitting diodes, the luminescence quenching caused by the traditional hole transport material poly (3,4-ethylene oxide thiophene / polystyrene sulfonic acid) (PEDOT:PSS) as a single interface layer can be effectively avoided. The performance of the corresponding devices is greatly improved. When the addition of M1 is 10%, the device has the best performance. The maximum current efficiency of the device is 9.0 cd A ~ (- 1), the maximum brightness is 35681 cd m ~ (- 2), and the switching voltage is 3.2V.The maximum current efficiency of the device is 9.00 cd A ~ (- 1), the maximum brightness is 35681 cd m ~ (- 2).
【作者单位】：华南理工大学高分子光电材料及器件研究所发光材料与器件国家重点实验室;
【基金】：广东省科技项目(项目号2014B090914002)资助
【分类号】：TN312.8

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