微纳结构硅的制备及器件化应用研究
发布时间：2019-04-27 21:57
【摘要】：硅是极为常见的一种元素,然而它极少以单质形式在自然界出现,而是以复杂的硅酸盐或二氧化硅的形式,广泛存在于岩石、砂砾、尘土之中。硅的含量巨大且提纯难度不高,以硅为基础的半导体器件成为主流半导体器件。光探测及光伏领域对近红外和可见光波段的吸收有较高要求,而单晶硅拥有较大的禁带宽度,无法高效吸收这些波段的光。化合物半导体材料虽然能在一定程度解决这个问题,但成本高昂限制了它们的广泛应用。科学家们不得不在硅材料本身寻求新的解决办法。“黑硅”是通过飞秒激光刻蚀等得到的在硅材料表面具有均匀细小尖锥微结构的一类材料,能够提高硅对光的吸收能力、延伸光谱探测范围,在可见及近红外波段有非常不错的表现。本文采用光催化电化学腐蚀工艺制备多孔硅,制备出了具有微米尺度的表面微结构硅。创新性地提出了“纳米多孔硅”的设想,利用电化学与金属催化化学相结合的刻蚀工艺,成功制备出了“纳米多孔硅”这种微结构硅材料。基于对微结构硅金半接触及器件制备的研究需要,基于微结构硅材料进行了电极制备及PIN原理性器件试制。研究表明,电化学腐蚀与金属催化刻蚀结合制备“纳米多孔硅”的设想具有可行性,制备出的“纳米多孔硅”具有良好的光学性能,基于微结构硅制备的PIN单元原理性器件,在近红外波段的响应度较高,这对改善硅基PIN探测器的性能具有重要意义。论文取得的主要研究成果如下:1)基于光催化电化学腐蚀工艺制备得到的多孔硅,具有大面积均匀性和良好的微米尺度表面微结构,在300 nm~1100 nm波段范围内光吸收率明显增强;2)利用“银镜反应”能够获得均匀的催化银粒子分布,既可以一步法制备纳米尺度微结构硅,还可以结合电化学与金属催化刻蚀工艺,制备得到“纳米多孔硅”材料,具有显著的光吸收特性,在可见光与近红外波段的吸收率达85%以上;3)用化学镀方法在微结构硅上制备金属电极,具有良好的电接触质量;基于微结构硅的Si-PIN光电探测原理性器件,在近红外波段表现出良好的响应特性。
[Abstract]:Silicon is a very common element, but it rarely appears in nature in the form of simple substance, but in the form of complex silicate or silica, it is widely found in rocks, gravel and dust. Silicon-based semiconductor devices have become the mainstream semiconductor devices because the silicon content is huge and the purification difficulty is not high. In the field of optical detection and photovoltaic, the absorption of near infrared and visible wavelengths is high, while monocrystalline silicon has a large band gap, so it is impossible to absorb the light in these bands efficiently. Compound semiconductor materials can solve this problem to a certain extent, but the high cost limits their wide application. Scientists have to find new solutions in the silicon material itself. "Black silicon" is a kind of materials with uniform and fine tapered microstructure on the surface of silicon materials obtained by femtosecond laser etching, which can improve the absorption ability of silicon to light and extend the detection range of spectrum. Very good performance in visible and near infrared bands. In this paper, porous silicon was prepared by photocatalysis electrochemical etching process, and the surface microstructure silicon with micrometer scale was prepared. The idea of "nano-porous silicon" was put forward creatively, and "nano-porous silicon" was successfully prepared by electrochemical etching process combined with metal catalytic chemistry. Based on the need of research on semi-contact of microstructure silicon and fabrication of devices, electrode preparation and PIN principle device fabrication were carried out based on micro-structure silicon material. The results show that it is feasible to fabricate "nano-porous silicon" by electrochemical etching combined with metal catalytic etching. The "nano-porous silicon" prepared by electrochemical etching has good optical properties. The PIN unit principle device based on microstructure silicon is fabricated. The high responsivity in near infrared band is very important to improve the performance of silicon-based PIN detector. The main results obtained in this thesis are as follows: 1) the porous silicon prepared by photocatalysis electrochemical etching has a large area uniformity and a good micro-scale surface microstructure, and the optical absorptivity is obviously enhanced in the range of 300 nm~1100 nm. 2) the uniform distribution of catalytic silver particles can be obtained by "silver mirror reaction", which not only can be used to prepare nano-scale microstructure silicon by one-step method, but also "nano-porous silicon" material can be prepared by combining electrochemistry and metal catalytic etching process, and "nano-porous silicon" can be prepared by electrochemistry and metal catalytic etching. The absorption rate is over 85% in visible and near infrared bands. 3) Electroless deposition of metal electrode on microstructure silicon has good electrical contact quality, and Si-PIN photoelectric detector based on microstructure silicon has good response characteristics in near infrared band.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303
[Abstract]:Silicon is a very common element, but it rarely appears in nature in the form of simple substance, but in the form of complex silicate or silica, it is widely found in rocks, gravel and dust. Silicon-based semiconductor devices have become the mainstream semiconductor devices because the silicon content is huge and the purification difficulty is not high. In the field of optical detection and photovoltaic, the absorption of near infrared and visible wavelengths is high, while monocrystalline silicon has a large band gap, so it is impossible to absorb the light in these bands efficiently. Compound semiconductor materials can solve this problem to a certain extent, but the high cost limits their wide application. Scientists have to find new solutions in the silicon material itself. "Black silicon" is a kind of materials with uniform and fine tapered microstructure on the surface of silicon materials obtained by femtosecond laser etching, which can improve the absorption ability of silicon to light and extend the detection range of spectrum. Very good performance in visible and near infrared bands. In this paper, porous silicon was prepared by photocatalysis electrochemical etching process, and the surface microstructure silicon with micrometer scale was prepared. The idea of "nano-porous silicon" was put forward creatively, and "nano-porous silicon" was successfully prepared by electrochemical etching process combined with metal catalytic chemistry. Based on the need of research on semi-contact of microstructure silicon and fabrication of devices, electrode preparation and PIN principle device fabrication were carried out based on micro-structure silicon material. The results show that it is feasible to fabricate "nano-porous silicon" by electrochemical etching combined with metal catalytic etching. The "nano-porous silicon" prepared by electrochemical etching has good optical properties. The PIN unit principle device based on microstructure silicon is fabricated. The high responsivity in near infrared band is very important to improve the performance of silicon-based PIN detector. The main results obtained in this thesis are as follows: 1) the porous silicon prepared by photocatalysis electrochemical etching has a large area uniformity and a good micro-scale surface microstructure, and the optical absorptivity is obviously enhanced in the range of 300 nm~1100 nm. 2) the uniform distribution of catalytic silver particles can be obtained by "silver mirror reaction", which not only can be used to prepare nano-scale microstructure silicon by one-step method, but also "nano-porous silicon" material can be prepared by combining electrochemistry and metal catalytic etching process, and "nano-porous silicon" can be prepared by electrochemistry and metal catalytic etching. The absorption rate is over 85% in visible and near infrared bands. 3) Electroless deposition of metal electrode on microstructure silicon has good electrical contact quality, and Si-PIN photoelectric detector based on microstructure silicon has good response characteristics in near infrared band.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN303
【参考文献】
相关期刊论文 前1条
1 林军，张丽珠，陈志坚，宋海智，姚德成，段家_铮导檬保挪铮毓
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