一种新型GaN功率开关器件（GIT）中子辐照效应研究
发布时间：2019-05-07 21:23
【摘要】：GaN功率开关器件因为其耐高温、耐高压、高功率容量和高频的特点在未来商用和军用市场有着巨大的应用潜力。增强型技术是当前研究GaN功率开关器件的热点内容之一。然而,当前国内外针对GaN增强型HEMT开展的辐照效应研究较少。根据器件工作机理分析,位移损伤是可能导致GaN增强型HEMT性能退化的主要因素。因此,开展增强型GaN功率开关器件中子辐照效应研究,对于评估GaN基功率开关器件在强辐射环境中的可靠应用具有重要意义。本文针对当前一种新型增强型GaN功率开关器件——栅注入晶体管(GIT),采用仿真和实验相结合的方法对其中子位移损伤效应和退化规律进行了研究。首先,利用Gent4计算了不同注量中子辐照下在器件中产生的位移缺陷密度;然后,采用SILVACO软件模拟了该器件的基本结构和主要特性,并通过在器件模型中嵌入陷阱的方法,分析了位移缺陷对器件性能的影响;最后,在反应堆中子环境下,对样品器件开展了1MeV中子的辐照实验,实验结果在一定程度上与仿真结果吻合。论文研究结果表明,与传统耗尽型GaN HEMT相比,GIT因为其特殊的结构,其位移损伤机理和中子辐照效应均有所不同。研究发现,当中子辐照注量达到1.6×1014cm-2时,器件产生的主要效应包括饱和漏电流的下降(其产生的主要原因是器件沟道迁移率的退化)和关态漏极漏电流的增加;而当中子注量高达1.5×1015cm-2时,除了出现上述的退化外,器件的阈值电压还发生了微弱的负向漂移。该器件阈值电压主要同沟道2DEG密度和p型栅的有效掺杂浓度有关,实验结果产生了负向漂移表明中子辐照产生的多数载流子去除效应对p型栅的影响占主导作用;此外,通过实验发现器件的关态栅漏电流始终没有发生明显变化。本文研究工作为GaN功率开关器件位移损伤效应研究和加固技术研究提供参考。
[Abstract]:Because of its high temperature resistance, high voltage resistance, high power capacity and high frequency, GaN power switching devices have great potential applications in commercial and military markets in the future. Enhanced technology is one of the hot topics in the research of GaN power switching devices. However, there are few studies on the radiation effects of GaN-enhanced HEMT at home and abroad. According to the analysis of the working mechanism of the device, the displacement damage is the main factor that may lead to the degradation of the performance of GaN-enhanced HEMT. Therefore, the study of neutron irradiation effect of enhanced GaN power switching devices is of great significance for evaluating the reliable application of GaN-based power switching devices in strong radiation environments. In this paper, a new type of enhanced GaN power switching device, gate injection transistor (GIT), is used to study the neutron displacement damage effect and degradation rule by means of simulation and experiment. Firstly, the density of displacement defects produced by neutron irradiation with different flux is calculated by Gent4. Then, the basic structure and main characteristics of the device are simulated by SILVACO software, and the effect of displacement defect on the performance of the device is analyzed by embedding trap in the device model. Finally, the 1MeV neutron irradiation experiments were carried out in the reactor neutron environment, and the experimental results were in agreement with the simulation results to a certain extent. The results show that the displacement damage mechanism and neutron irradiation effect of GIT are different because of its special structure compared with the traditional depletion type GaN HEMT. It is found that when the neutron irradiation flux reaches 1.6 脳 1014 cm ~ (- 2), the main effects of the device include the decrease of the saturation leakage current (the main reason is the degradation of the channel mobility) and the increase of the off-state drain current. When the neutron flux is up to 1.5 脳 1015cm ~ (- 2), the threshold voltage of the device also has a weak negative drift in addition to the above degradation. The threshold voltage of the device is mainly related to the channel 2DEG density and the effective doping concentration of p-gate. The negative drift results show that the effect of neutron irradiation on p-type gate is dominated by the majority carrier removal effect. In addition, it is found by experiments that the gate leakage current of the device has not changed significantly. The research work in this paper provides a reference for the study of displacement damage effect and reinforcement technology of GaN power switch devices.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32;TN386
本文编号：2471393
[Abstract]:Because of its high temperature resistance, high voltage resistance, high power capacity and high frequency, GaN power switching devices have great potential applications in commercial and military markets in the future. Enhanced technology is one of the hot topics in the research of GaN power switching devices. However, there are few studies on the radiation effects of GaN-enhanced HEMT at home and abroad. According to the analysis of the working mechanism of the device, the displacement damage is the main factor that may lead to the degradation of the performance of GaN-enhanced HEMT. Therefore, the study of neutron irradiation effect of enhanced GaN power switching devices is of great significance for evaluating the reliable application of GaN-based power switching devices in strong radiation environments. In this paper, a new type of enhanced GaN power switching device, gate injection transistor (GIT), is used to study the neutron displacement damage effect and degradation rule by means of simulation and experiment. Firstly, the density of displacement defects produced by neutron irradiation with different flux is calculated by Gent4. Then, the basic structure and main characteristics of the device are simulated by SILVACO software, and the effect of displacement defect on the performance of the device is analyzed by embedding trap in the device model. Finally, the 1MeV neutron irradiation experiments were carried out in the reactor neutron environment, and the experimental results were in agreement with the simulation results to a certain extent. The results show that the displacement damage mechanism and neutron irradiation effect of GIT are different because of its special structure compared with the traditional depletion type GaN HEMT. It is found that when the neutron irradiation flux reaches 1.6 脳 1014 cm ~ (- 2), the main effects of the device include the decrease of the saturation leakage current (the main reason is the degradation of the channel mobility) and the increase of the off-state drain current. When the neutron flux is up to 1.5 脳 1015cm ~ (- 2), the threshold voltage of the device also has a weak negative drift in addition to the above degradation. The threshold voltage of the device is mainly related to the channel 2DEG density and the effective doping concentration of p-gate. The negative drift results show that the effect of neutron irradiation on p-type gate is dominated by the majority carrier removal effect. In addition, it is found by experiments that the gate leakage current of the device has not changed significantly. The research work in this paper provides a reference for the study of displacement damage effect and reinforcement technology of GaN power switch devices.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN32;TN386
【参考文献】
相关期刊论文 前2条
1 钱照明;张军明;盛况;;电力电子器件及其应用的现状和发展[J];中国电机工程学报;2014年29期
2 张明兰;杨瑞霞;王晓亮;胡国新;高志;;高击穿电压AlGaN/GaN HEMT电力开关器件研究进展[J];半导体技术;2010年05期
，本文编号：2471393
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