单芯片集成紫外探测器及其读出电路设计

发布时间：2019-05-08 10:03

【摘要】：目前,市面上存在的紫外探测器普遍具有响应度低、紫外选择性差、量子效率低、噪声大、微弱光信号探测能力差等缺点,基于实验室已有的硅基探测器基础,结合CMOS工艺特点,以半导体器件物理为理论基础,研究紫外探测器的相关原理,旨在提高紫外探测器的弱光响应灵敏度,增强紫外探测器的选择性,并降低其噪声;同时,揭示系统集成紫外探测器的可能性,为单芯片集成紫外探测系统提供新思路。通过学习典型多阳极紫外光电二极管理论知识与分析其模拟数据,对紫外探测器做了相应的优化与改进,最终得到了一种可用于单芯片集成的紫外-红外互补型结构紫外探测器,实现了高响应度、高选择性及低噪声的光电探测。新型紫外-红外互补型结构紫外探测器在传统紫外探测器的结构基础上,增加了一个红外探测器用以实现电流补偿。在红外波段照射范围,紫外探测器比红外探测器的响应要小很多,欲使探测器实现探测功能,必须使得紫外探测器对红外光和可见光信息的响应与红外探测器在此波段的响应相同。本文通过调节两个探测器的面积比例,使AUV/AIR=15来实现这一要求。通过Silvaco软件对设计的探测器进行了TCAD仿真验证,结果表明新型探测器具有低暗电流、高紫外响应速度以及高紫外选择性。本文进一步研究了针对所设计新型紫外探测器的CMOS读出电路技术,并设计了一款与探测器相匹配的低功耗读出电路结构。该读出电路采用折叠式共源共栅结构运算放大器,详细介绍了读出电路各参数指标的计算过程,并对输入失调电压、共模抑制比、电源抑制比、转换速率和不同情况下的噪声特性、输出特性进行了仿真验证,结果表明该电路具有高精度、低噪声等优良性能。本文采用标准0.5μm CMOS工艺对新型紫外探测器及其读出电路进行了版图设计并流片,实现了器件与电路的单芯片集成,最后完成该探测系统的测试工作。
[Abstract]:At present, the UV detectors in the market generally have the disadvantages of low responsivity, poor UV selectivity, low quantum efficiency, large noise and poor detection ability of weak optical signals. Based on the existing silicon-based detectors in the laboratory, According to the characteristics of CMOS technology and based on the physics of semiconductor devices, the principle of UV detector is studied in order to improve the sensitivity of UV detector, enhance the selectivity of UV detector, and reduce the noise of UV detector. At the same time, the possibility of the system integrating UV detector is revealed, which provides a new idea for single chip integrated UV detector system. By studying the theoretical knowledge of typical multi-anode UV photodiode and analyzing its simulation data, the UV detector is optimized and improved. Finally, a kind of UV-IR complementary UV detector which can be used in single-chip integrated UV-IR detector is obtained, and the photoelectric detector with high responsivity, high selectivity and low noise is realized. Based on the structure of the traditional UV detector, a new UV-IR complementary structure UV detector is added to realize the current compensation. In the infrared range, the response of the ultraviolet detector is much smaller than that of the infrared detector, in order to make the detector realize the detection function. The response of the UV detector to the infrared and visible light information must be the same as that of the infrared detector in this band. This paper makes AUV/AIR=15 realize this requirement by adjusting the area ratio of the two detectors. The TCAD simulation results show that the new detector has low dark current, high UV response speed and high UV selectivity. The results of TCAD simulation by Silvaco software show that the detector has low dark current, high UV response speed and high UV selectivity. In this paper, the CMOS readout circuit technology for the new UV detector is further studied, and a low power readout circuit structure matching with the detector is designed. The readout circuit adopts folding common-source common-gate operational amplifier. The calculation process of each parameter index of readout circuit is introduced in detail, and the input offset voltage, common mode rejection ratio and power supply rejection ratio are discussed in detail. The simulation results show that the circuit has good performance such as high precision, low noise and so on. In this paper, a novel ultraviolet detector and its readout circuit are designed by using the standard 0.5 渭 m CMOS process, and the monolithic integration of the detector and the circuit is realized. Finally, the test work of the detection system is completed.
【学位授予单位】：湘潭大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN23

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