衬底加热和电极修饰对有机场效应晶体管性能影响的研究
发布时间：2019-05-08 10:06
【摘要】：自从有机场效应晶体管(OFETs)诞生以来就受到了广泛关注,由于具有制备工艺简单、成本低廉、适合低温大面积制造、可与柔性衬底兼容等诸多优势,使其在电子器件中有着巨大应用潜力。它可以用于智能卡、传感器、电子纸、射频识别标签等,为大规模集成电路、平板显示驱动等提供了新的解决方案,成为有机电子器件中重要的研究领域。OFETs是注入型的器件,载流子传输的和注入都对其器件性能起着至关重要的影响。一方面,在有源层制备过程中进行衬底加热是一种行之有效的改善薄膜形态的手段,可以进而优化载流子传输;另一方面,在电极与有源层间插入修饰材料可以有效地提高载流子注入。因此,本文主要从上述两个方面,采用衬底加热,分别在基于p型和n型半导体材料的器件中使用电极修饰材料,研究了不同的衬底温度条件和电极修饰层厚度对器件性能的影响。具体研究内容如下:(1)制备了基于并五苯为有源层、PMMA为绝缘层的底栅顶接触结构OFETs器件,在并五苯薄膜的真空蒸镀过程中控制衬底温度分别保持在15、30、60、90?C。结果显示在60?C衬底温度条件下器件性能最好,器件的有效迁移率从15?C的2.9×10-4 cm2/V·s提高到3.39×10-3cm2/V·s。通过理论分析,分析了60?C衬底温度下器件性能达到最优的原因。(2)基于衬底加热的最佳优化条件,制备了基于并五苯和PMMA分别有源层和绝缘层的底栅顶接触结构OFETs器件,并在Al电极和并五苯有源层间插入过渡金属氧化物Mo O3。结果显示,与未插入Mo O3修饰层的器件相比,器件的有效迁移率达到2.25×10-1cm2/V·s,提高了66倍,阈值电压也由12V降到了3V。这是由于Mo O饰层有效地降低了Al电极和并五苯之间的注入势垒,降低了接触电阻,从而提高了载流子注入。(3)探索制备了基于n型材料P13为有源层的底栅顶接触OFET器件,采用了OLEDs中常用的对阴极注入起增强作用的Cs2CO3、Cs CH2COOH作为修饰材料,研究这两种修饰层对P13器件性能的影响。制备的未修饰P13器件展示了较典型的n型输出特性,而Cs2CO3修饰后的器件性能有所提高,Cs CH2COOH修饰后的器件未获得稳定的性能,并对实验结果进行了合理的理论分析。
[Abstract]:Airport effect transistor (OFETs) has been paid more and more attention since its birth. It has many advantages, such as simple preparation process, low cost, suitable for low temperature and large area manufacturing, compatibility with flexible substrate and so on. It has great application potential in electronic devices. It can be used in smart cards, sensors, electronic paper, radio frequency identification tags and so on. It provides a new solution for large scale integrated circuits, flat panel display drivers, and becomes an important research field in organic electronic devices. OFETs is an injection type device. Both carrier transport and injection play an important role in the performance of the device. On the one hand, substrate heating in the process of active layer preparation is an effective means to improve the morphology of thin films, which can optimize carrier transport. On the other hand, the insertion of modified materials between the electrode and the active layer can effectively improve the carrier injection. Therefore, from the above two aspects, the substrate heating is used to modify the electrode in the devices based on p-type and n-type semiconductor materials, respectively. The effects of substrate temperature and electrode modification layer thickness on the device performance were investigated. The main contents are as follows: (1) the bottom gate top contact structure OFETs device based on pentaben as active layer and PMMA as insulating layer was fabricated. The substrate temperature was kept at 15,30,60,90 鈩，
本文编号：2471825
[Abstract]:Airport effect transistor (OFETs) has been paid more and more attention since its birth. It has many advantages, such as simple preparation process, low cost, suitable for low temperature and large area manufacturing, compatibility with flexible substrate and so on. It has great application potential in electronic devices. It can be used in smart cards, sensors, electronic paper, radio frequency identification tags and so on. It provides a new solution for large scale integrated circuits, flat panel display drivers, and becomes an important research field in organic electronic devices. OFETs is an injection type device. Both carrier transport and injection play an important role in the performance of the device. On the one hand, substrate heating in the process of active layer preparation is an effective means to improve the morphology of thin films, which can optimize carrier transport. On the other hand, the insertion of modified materials between the electrode and the active layer can effectively improve the carrier injection. Therefore, from the above two aspects, the substrate heating is used to modify the electrode in the devices based on p-type and n-type semiconductor materials, respectively. The effects of substrate temperature and electrode modification layer thickness on the device performance were investigated. The main contents are as follows: (1) the bottom gate top contact structure OFETs device based on pentaben as active layer and PMMA as insulating layer was fabricated. The substrate temperature was kept at 15,30,60,90 鈩，
本文编号：2471825
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