100kHz低频功放SiC MOSFET串扰分析与驱动设计
发布时间：2019-05-10 06:33
【摘要】：针对碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)在100 kHz低频(LF)功放应用中出现的串扰问题,考虑SiC MOSFET寄生参数分阶段研究串扰过程,分析关键参数对串扰电压尖峰的影响,从而提出降低串扰尖峰的若干思路。为抑制串扰现象,采用无源抑制方法进行驱动设计,该驱动设计简单可靠,具有较高工程应用价值。最后,进行驱动对比实验,采用所提驱动设计对串扰的抑制效果显著,正、负向串扰电压尖峰比基本驱动电路分别降低73%和70%。
[Abstract]:Aiming at the crosstalk problem of MOSFET in 100kHz low-frequency(LF)power amplifier application, SiCMOSFET parasitic parameters are considered to study the crosstalk process in stages, analyze the influence of key parameters on crosstalk voltage spikes, and some ideas are put forward. In order to suppress crosstalk phenomenon, passive suppression method is adopted for driving design. The drive design is simple and reliable and has high engineering application value. Finally锛，
本文编号：2473417
[Abstract]:Aiming at the crosstalk problem of MOSFET in 100kHz low-frequency(LF)power amplifier application, SiCMOSFET parasitic parameters are considered to study the crosstalk process in stages, analyze the influence of key parameters on crosstalk voltage spikes, and some ideas are put forward. In order to suppress crosstalk phenomenon, passive suppression method is adopted for driving design. The drive design is simple and reliable and has high engineering application value. Finally锛，
本文编号：2473417
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