微波毫米波功率放大器的研究与设计
发布时间：2019-05-17 02:17
【摘要】：现代社会中,无线电通信技术与市场日益成熟,通信频段资源愈发地紧张,低频频段的频谱资源已被开拓殆尽,毫米波频段则尚有很大的利用空间,且其还拥有通信带宽较宽等优点。于是,毫米波频段便作为目前电子技术全新拓展的主要频段,在通信,雷达,制导等方面有了广泛的发展与应用。而作为微波,毫米波收发电路中的核心器件的功率放大器,整个通讯系统的性能将直接受其影响,因此对其的研究具有重要意义。同时,微波频段器件所需要的加工精度和其工作频率对应的波长有关,其波长越短,对加工精度要求便越高。为了满足加工精度的要求,工作频率在X波段及以上的器件都更倾向于用单片微波集成电路(Monolithic Microwave Integrated Circuit,MMIC)的方式来实现,MMIC是一种同一块半导体基板上同时集成了有源以及无源元器件的微波电路,其与普通的微波集成电路(Microwave Integrated Circuit,MIC)的区别在于,后者是一种不同元器件使用不同加工工艺的混合集成电路,其通过将有源元件和无源元件通过焊接或导电胶黏接等外部连接的方式集成于同一个基片上,其缺点在于重复生产能力差,需要手工调整电路来达到性能指标,这使得其不适用于批量生产。本文基于WIN半导体的GaAs pHEMT工艺,着重探究了Ka波段功率放大器的设计理论与方法,涉及宽带匹配结构、芯片面积压缩技巧、低频稳定性和非线性稳定性的稳定方法等。设计并仿真了一个工作频带位于32-40GHz的宽带高效率功放,其基于WIN半导体PP1011工艺,流片加工并通过了测试,测量的数据显示,带内输出功率100mW,带内PAE在30%-35.5%之间。此外,设计了一个工作频带位于28-31GHz的2W高线性度功放,其基于WIN半导体PP1551工艺,该项目完成了第一轮设计、流片。测试结果表明其回波特性,IM3指标基本满足要求,工作频带的高频部分饱和输出功率及PAE有所不足,整体小信号增益也有所欠缺,经分析得出原因后将在第二轮流片设计时对其进行改进。同时设计了一款工作于33-36GHz的T/R芯片,其同样基于WIN半导体PP1011工艺,整版电磁仿真结果基本符合指标要求。在33GHz-36GHz的工作频带内,功放部分电路的输入回波优于13dB,输出回波优于7dB,小信号增益大于13dB,饱和输出功率大于28dBm,PAE大于22%;低噪放部分的两个端口的回波损耗都优于17dB,小信号增益大于13dB;噪声因子小于2.3dB。
[Abstract]:In modern society, radio communication technology and market are becoming more and more mature, communication band resources are becoming more and more tight, spectrum resources of low frequency band have been exploited, millimeter wave frequency band still has a lot of utilization space. And it also has the advantages of wide communication bandwidth. Therefore, millimeter wave band, as the main frequency band of electronic technology, has been widely developed and applied in communication, radar, guidance and so on. As the power amplifier of the core device in microwave and millimeter wave transceiver circuit, the performance of the whole communication system will be directly affected by it, so the research on it is of great significance. At the same time, the machining accuracy of microwave band devices is related to the wavelength corresponding to its working frequency. The shorter the wavelength is, the higher the machining accuracy is. In order to meet the requirements of machining accuracy, devices with operating frequency of X band and above are more inclined to be realized by single chip microwave integrated circuit (Monolithic Microwave Integrated Circuit,MMIC). MMIC is a kind of microwave circuit which integrates both active and passive components on the same semiconductor substrate, which is different from the ordinary microwave integrated circuit (Microwave Integrated Circuit,MIC. The latter is a hybrid integrated circuit with different components using different processing processes, which integrates active and passive components on the same substrate by welding or conductive adhesive bonding and other external connections. The disadvantage is that the repeated production capacity is poor and the circuit needs to be adjusted manually to achieve the performance index, which makes it not suitable for mass production. Based on the GaAs pHEMT process of WIN semiconductor, the design theory and method of Ka band power amplifier are discussed in this paper, including broadband matching structure, chip area compression technique, low frequency stability and nonlinear stability. A broadband high efficiency power amplifier with operating band located in 32-40GHz is designed and simulated. Based on WIN semiconductor PP1011 process, the chip is processed and tested. The measured data show that the in-band output power is 100MW. The in-band PAE was between 30% and 35.5%. In addition, a 2W high linearity power amplifier located in 28-31GHz is designed, which is based on WIN semiconductor PP1551 process. The first round design of the project is completed. The test results show that the echo characteristics and IM3 index basically meet the requirements, the high frequency partial saturated output power and PAE of the working frequency band are insufficient, and the overall small signal gain is also deficient. After analyzing the reason, it will be improved in the second round flow sheet design. At the same time, a T 鈮，
本文编号：2478726
[Abstract]:In modern society, radio communication technology and market are becoming more and more mature, communication band resources are becoming more and more tight, spectrum resources of low frequency band have been exploited, millimeter wave frequency band still has a lot of utilization space. And it also has the advantages of wide communication bandwidth. Therefore, millimeter wave band, as the main frequency band of electronic technology, has been widely developed and applied in communication, radar, guidance and so on. As the power amplifier of the core device in microwave and millimeter wave transceiver circuit, the performance of the whole communication system will be directly affected by it, so the research on it is of great significance. At the same time, the machining accuracy of microwave band devices is related to the wavelength corresponding to its working frequency. The shorter the wavelength is, the higher the machining accuracy is. In order to meet the requirements of machining accuracy, devices with operating frequency of X band and above are more inclined to be realized by single chip microwave integrated circuit (Monolithic Microwave Integrated Circuit,MMIC). MMIC is a kind of microwave circuit which integrates both active and passive components on the same semiconductor substrate, which is different from the ordinary microwave integrated circuit (Microwave Integrated Circuit,MIC. The latter is a hybrid integrated circuit with different components using different processing processes, which integrates active and passive components on the same substrate by welding or conductive adhesive bonding and other external connections. The disadvantage is that the repeated production capacity is poor and the circuit needs to be adjusted manually to achieve the performance index, which makes it not suitable for mass production. Based on the GaAs pHEMT process of WIN semiconductor, the design theory and method of Ka band power amplifier are discussed in this paper, including broadband matching structure, chip area compression technique, low frequency stability and nonlinear stability. A broadband high efficiency power amplifier with operating band located in 32-40GHz is designed and simulated. Based on WIN semiconductor PP1011 process, the chip is processed and tested. The measured data show that the in-band output power is 100MW. The in-band PAE was between 30% and 35.5%. In addition, a 2W high linearity power amplifier located in 28-31GHz is designed, which is based on WIN semiconductor PP1551 process. The first round design of the project is completed. The test results show that the echo characteristics and IM3 index basically meet the requirements, the high frequency partial saturated output power and PAE of the working frequency band are insufficient, and the overall small signal gain is also deficient. After analyzing the reason, it will be improved in the second round flow sheet design. At the same time, a T 鈮，
本文编号：2478726
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