超声椭圆振动辅助抛光硅片表面形貌与材料去除仿真

发布时间：2019-05-17 09:42

【摘要】：集成电路(Integrate Circuit)作为电子产品的主要部件,其主要基底材料—单晶硅片的加工质量,在一定程度上影响着电子产品的性能。目前,由于电子产品性能越来越好,对IC的集成度也提出了更高的要求,要求硅片的刻蚀线宽越来越细、表面平坦度越来越高。为了降低硅片的制造成本,提高硅片产量,硅片的直径越来越大。与之相反,电子产品却要求芯片向小型化、薄型化方向发展,这给硅片加工,尤其是抛光加工带来了许多亟待解决的问题。因此,探索一种提高单晶硅片的加工表面质量及材料去除效果的加工方法,显得尤为突出。超声振动辅助加工由于其抛光力小、材料去除率高、对材料表面损伤小等优点,而得到较为广泛应用。鉴于此,本文在传统的固结磨粒化学机械抛光方法的基础上,引入超声椭圆振动辅助加工技术,并开展了加工实验及仿真分析。其主要内容如下:首先,对硅片抛光技术及超声辅助加工原理及进行了概述,对超声加工中加工工具的椭圆振动轨迹进行了仿真。其次,对超声椭圆振动辅助抛光装置的主要部件及工作原理进行了介绍。在此基础上,对固结磨粒抛光片的表面形貌、硅片抛光表面形貌及材料去除分别建立了数学建模,并利用MATLAB软件对施加超声振动辅助抛光和传统抛光硅片表面形貌及材料去除效果进行对比分析,得出超声椭圆振动辅助抛光硅片的表面质量更优、材料去除率更高。最后,研究了硅片抛光压力对超声椭圆振动辅助抛光硅片表面质量及材料去除效果的影响,并得出了一些理论及工艺规律。通过仿真与实验研究,为实际加工中提高硅片抛光表面质量及材料去除效果提供了一定的,可供参考的理论。
[Abstract]:As the main component of electronic products, the processing quality of single crystal silicon wafer, the main substrate material of integrated circuit (Integrate Circuit), affects the performance of electronic products to a certain extent. At present, as the performance of electronic products is getting better and better, the integration of IC is also put forward, which requires the etched linewidth of silicon wafer to be thinner and the surface flatness higher and higher. In order to reduce the manufacturing cost of silicon wafer and increase the output of silicon wafer, the diameter of silicon wafer is getting larger and larger. On the contrary, electronic products require the development of chips in the direction of miniaturization and thinning, which brings many problems to be solved urgently for silicon wafer processing, especially polishing. Therefore, it is particularly prominent to explore a machining method to improve the surface quality and material removal efficiency of single crystal silicon wafer. Ultrasonic vibration aided machining has been widely used because of its low polishing force, high material removal rate and small surface damage. In view of this, on the basis of the traditional chemical mechanical polishing method of consolidated abrasive particles, ultrasonic elliptical vibration aided machining technology is introduced, and the machining experiment and simulation analysis are carried out. The main contents are as follows: firstly, the polishing technology of silicon wafer and the principle and principle of ultrasonic aided machining are summarized, and the elliptical vibration trajectory of machining tool in ultrasonic machining is simulated. Secondly, the main components and working principle of ultrasonic elliptical vibration assisted polishing device are introduced. On this basis, the mathematical models of the surface morphology, the polishing surface morphology and the material removal of the consolidated abrasive polishing wafer are established respectively. The surface morphology and material removal effect of ultrasonic vibration assisted polishing and traditional polishing silicon wafer are compared and analyzed by MATLAB software. It is concluded that the surface quality of ultrasonic elliptical vibration assisted polishing silicon wafer is better and the material removal rate is higher. Finally, the effect of polishing pressure on the surface quality and material removal efficiency of ultrasonic elliptical vibration assisted polishing silicon wafer was studied, and some theories and technological laws were obtained. Through simulation and experimental research, it provides a certain theory for improving the polishing surface quality and material removal effect of silicon wafer in practical machining.
【学位授予单位】：江西农业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12

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