压接式IGBT器件内部并联支路瞬态电流均衡特性的研究

发布时间：2019-05-20 05:37

【摘要】：压接式IGBT(press pack IGBT,PPI)器件在高压大电流应用领域中越来越引起关注。在PPI器件的开关过程中,内部并联芯片的最大电流过冲决定了器件的使用极限。该文提出了一种新型圆周凸台布局方式,可使PPI器件开通过程中各个IGBT芯片支路的电流过冲只超过额定电流的4.7%,各个续流二极管支路的电流完全一致。首先,采用Ansoft Q3D Extractor提取了PPI器件内部IGBT芯片发射极凸台支路和续流二极管并联凸台支路的电感参数矩阵,建立了用于分析PPI器件内部并联IGBT芯片和续流二极管支路开通与关断过程电流波形的等效电路,并基于实验测量方法,验证了所提电感参数的有效性。以2500V/600A的PPI器件为例,研究了该器件内部并联IGBT芯片和续流二极管支路的电流过冲及开关损耗特性。其次,基于该文定义的并联凸台支路的电流过冲系数和不均流因子,对现有的PPI器件内部凸台布局方式进行了优化。结果表明,优化后的凸台布局方式大大降低了PPI器件开通和关断过程中各个并联支路的电流过冲,且IGBT芯片的开关损耗更加均匀。该文的研究成果可以应用于更大电流参数的压接式IGBT器件内部并联芯片的布局设计。
[Abstract]:IGBT (press pack IGBT,PPI) devices have attracted more and more attention in the field of high voltage and high current applications. In the switching process of PPI devices, the maximum current overshoot of the internal parallel chip determines the limit of the device. In this paper, a new type of circumferential convex table layout is proposed, which can make the current overshoot of each IGBT chip branch only exceed 4.7% of the rated current during the turn-on of PPI devices, and the current of each continuation diode branch is exactly the same. Firstly, Ansoft Q3D Extractor is used to extract the inductance parameter matrix of the emitter convex station branch and the continuous current diode parallel convex station branch of the IGBT chip in the PPI device. An equivalent circuit for analyzing the current waveform of parallel IGBT chip and branch of continuous current diode in PPI device is established, and the effectiveness of the proposed inductance parameters is verified based on the experimental measurement method. Taking the PPI device of 2500V/600A as an example, the characteristics of current overshoot and switching loss of parallel IGBT chip and branch of continuous current diode are studied. Secondly, based on the current overshoot coefficient and uneven current factor of the parallel convex platform branch defined in this paper, the internal convex platform layout of the existing PPI devices is optimized. The results show that the optimized convex platform layout greatly reduces the current overshoot of each parallel branch during the turn-on and shutdown of PPI devices, and the switching loss of IGBT chip is more uniform. The research results of this paper can be applied to the layout design of parallel chips in voltage-connected IGBT devices with larger current parameters.
【作者单位】：新能源电力系统国家重点实验室(华北电力大学);全球能源互联网研究院;
【基金】：国家自然科学基金项目(51477048) 国家能源应用技术研究及工程示范项目(NY20150705)~~
【分类号】：TN322.8

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