保护环版图结构对ESD防护器件耐压能力的影响
发布时间：2019-05-22 13:48
【摘要】：基于华润上华0.5μm双极-CMOS-DMOS(BCD)工艺设计制备了不同保护环分布情况下的叉指型内嵌可控硅整流器的横向扩散金属氧化物半导体(LDMOS-SCR)结构器件,并利用传输线脉冲(TLP)测试比较静电放电(ESD)防护器件的耐压能力。以LDMOS-SCR结构为基础,按照16指、8指、4指和2指设置保护环,形成4种不同类型的版图结构。通过器件的直流仿真分析多指器件的开启情况,利用传输线脉冲测试对比不同保护环版图结构的耐压能力。仿真和测试结果表明,改进后的3类版图结构相对于普遍通用的第一类版图结构,二次击穿电流都有所提升,其中每8指设置一个保护环的版图结构二次击穿电流提升了76.36%,其单位面积的鲁棒性能也最好,为相应工艺设计最高耐压值的ESD防护器件提供了参考结构和方法。
[Abstract]:Based on the 0.5 渭 m bipolar-CMOS-DMOS (BCD) process of China Resources, the transverse diffused metal oxide semiconductor (LDMOS-SCR) structure device of cross-finger embedded thyristor rectifier with different protection ring distribution is designed and fabricated. The voltage resistance of electrostatic discharge (ESD) protective devices is measured and compared by transmission line pulse (TLP). Based on LDMOS-SCR structure, four different types of layout structures are formed by setting protective rings according to 16 fingers, 8 fingers, 4 fingers and 2 fingers. Through the DC simulation of the device, the opening of the multi-finger device is analyzed, and the voltage resistance of different protection ring layout structures is compared by using the transmission line pulse test. The simulation and test results show that the secondary breakdown current of the improved three types of layout structures is higher than that of the first kind of layout structures. The secondary breakdown current of each 8 fingers with a protective ring is increased by 76.36%, and the robust performance per unit area is the best, which provides a reference structure and method for the ESD protective device with the highest voltage withstand value of the corresponding process design.
【作者单位】： 中国科学技术大学电子科学与技术系;中国科学院自动化研究所国家专用集成电路设计工程技术研究中心;
【分类号】：TN386.1
本文编号：2482986
[Abstract]:Based on the 0.5 渭 m bipolar-CMOS-DMOS (BCD) process of China Resources, the transverse diffused metal oxide semiconductor (LDMOS-SCR) structure device of cross-finger embedded thyristor rectifier with different protection ring distribution is designed and fabricated. The voltage resistance of electrostatic discharge (ESD) protective devices is measured and compared by transmission line pulse (TLP). Based on LDMOS-SCR structure, four different types of layout structures are formed by setting protective rings according to 16 fingers, 8 fingers, 4 fingers and 2 fingers. Through the DC simulation of the device, the opening of the multi-finger device is analyzed, and the voltage resistance of different protection ring layout structures is compared by using the transmission line pulse test. The simulation and test results show that the secondary breakdown current of the improved three types of layout structures is higher than that of the first kind of layout structures. The secondary breakdown current of each 8 fingers with a protective ring is increased by 76.36%, and the robust performance per unit area is the best, which provides a reference structure and method for the ESD protective device with the highest voltage withstand value of the corresponding process design.
【作者单位】： 中国科学技术大学电子科学与技术系;中国科学院自动化研究所国家专用集成电路设计工程技术研究中心;
【分类号】：TN386.1
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1 王福谦;;极板截面椭圆化对圆柱形电容器耐压能力的影响[J];电子器件;2013年03期
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