一种基于LDMOS器件的P波段功率放大器的理论与设计

发布时间：2019-05-29 12:22

【摘要】：与硅双极型功率器件相比,LDMOS微波功率器件具有频带宽、输出功率高、功率增益高、线性度好、热稳定性好、没有二次击穿等诸多优点,在要求高功率、高增益、高线性度的通信领域应用较为广泛,特别是在移动基站上,LDMOS是首选的微波功率器件,占据了约90%的市场份额[1]。随着LDMOS微波功率器件的设计越来越优化、加工技术和手段越来越成熟、产品可靠性水平不断提高,LDMOS又在向脉冲大功率应用领域方向发展,随着需求的提高,适合脉冲应用的LDMOS新产品也在不断被开发出来,并不断地被推向市场。许多研究机构和公司都在开展LDMOS器件的研制和开发工作,特别著名的,如Infineon、NXP、Freescale等公司都拥有自主的LDMOS产品研发生产线,并开发出比较完善的系列化产品。本文基于脉冲器件应用的市场需求,进行P波段LDMOS微波脉冲功率放大器的设计工作进行讨论研究。在对P波段LDMOS微波功率放大器设计过程中,论文将讨论三个方面的内容。第一方面首先讨论了 LDMOS微波功率器件工艺原理,具体内容里将在第二章节阐述;LDMOS微波功率器件是放大器设计的关键元器件,因此它是放大器设计的依据,所以第二个方面主要讨论了设计LDMOS微波功率器件内匹配电路模型,这些内容都将在第三章节里详细讨论。第三方面主要讨论了 P波段LDMOS脉冲功率放大器的设计和研制,主要包括如下内容:放大器的设计原理和电路、放大器输入输出匹配网络的设计、放大器的可靠性设计、放大器的稳定性研究以及放大器的最终测试结果分析等几方面的内容,在论文的第四章和第五章节里具体阐述这些内容。最终研制设计的P波段微波功率放大器在4XX-6XXMHz频带内脉冲功率输出大于200W,功率增益高于48dB,附加效率高于55%。
[Abstract]:Compared with silicon bipolar power device, LDMOS microwave power device has many advantages, such as wide frequency band, high output power, high power gain, good linearity, good thermal stability, no secondary breakdown and so on. High linearity communication is widely used, especially in mobile base stations, LDMOS is the preferred microwave power device, accounting for about 90% of the market share [1]. With the increasing optimization of the design of LDMOS microwave power devices, the processing technology and means are becoming more and more mature, the reliability level of products is improving, and LDMOS is developing in the field of pulse high power applications, with the improvement of demand. New LDMOS products suitable for pulse applications are also being developed and put on the market. Many research institutions and companies are carrying out the research and development of LDMOS devices, especially famous companies such as Infineon,NXP,Freescale have their own LDMOS product research and development production line, and have developed more perfect series products. Based on the market demand of pulse device application, the design of P-band LDMOS microwave pulse power amplifier is discussed and studied in this paper. In the design of P-band LDMOS microwave power amplifier, three aspects will be discussed in this paper. In the first aspect, the technological principle of LDMOS microwave power device is discussed, which will be described in the second chapter. LDMOS microwave power device is the key component of amplifier design, so it is the basis of amplifier design, so the second aspect mainly discusses the design of LDMOS microwave power device internal matching circuit model. These contents will be discussed in detail in the third chapter. The third aspect mainly discusses the design and development of P-band LDMOS pulse power amplifier, including the design principle and circuit of amplifier, the design of amplifier input-output matching network, the reliability design of amplifier, The stability of the amplifier and the analysis of the final test results of the amplifier are described in chapter 4 and chapter 5. Finally, the P-band microwave power amplifier is developed and designed, the pulse power output is more than 200W, the power gain is higher than 48dB, and the additional efficiency is more than 55% in the 4XX-6XXMHz band.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722.75

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