基于GaAs工艺的低噪声放大器及ESD保护电路设计

发布时间：2019-06-10 09:12

【摘要】：在无线通信应用上,硅器件与砷化镓器件之间有很大的竞争。然而,由于砷化镓的高电子迁移率、低损耗半绝缘性衬底、高的线性度、高截止频率、高击穿电压等优点,一直以来其在微波、毫米波电路中比硅工艺更加受欢迎,特别是更加适合应用到功率放大器、低噪声放大器等电路的设计。考虑到以上问题,本论文着重进行基于砷化镓工艺低噪声放大器设计的研究。对电路可靠性等问题,进行了砷化镓工艺下的静电保护电路研究。一方面,低噪声放大器作为接收机的第一级有源模块,应有足够低的噪声来提高接收机的灵敏度；并且应该有足够高的增益以抑制后级混频器等电路的噪声。本文低噪声放大器电路采用的是两级源极退化结构。区别于大部分砷化镓低噪声放大器所采用的片外电感直流偏置方式,本文采用的是片上电阻值比较大的电阻。低噪声放大器后仿真结果为：最大增益为33.257dB,3dB带宽为520MHz(1.13GHz到1.65GHz)。在1.16GHz-1.61GHz频段上,S11恒小于-10dB。在1.14GHz-1.61GHz频段上，输出噪声系数恒小于0.6dB；输出1dB压缩点大于+19.6dBm,输入1dB压缩点大于-12.8dBm；输出三阶截点大于31dBm,输入三阶截点大于-2dBm。电路版图面积是0.88mm×1.3mm。另一方面,ESD是造成砷化镓工艺集成电路不可靠的最大问题。而且,由于砷化镓工艺的热传导率与熔点都比硅材料要低,这使得由ESD造成砷化镓电路不可靠的问题比硅材料更大。为此，，本文设计了一个片上层叠二极管结构的ESD保护电路。低噪声放大器是接收机一个重要的模块,是微波毫米波应用里的一个重要部分,可用在无线通信、GPS、无线局域网等应用中。
[Abstract]:In wireless communication applications, there is a great competition between silicon devices and gallium arsenide devices. However, gallium arsenide has always been more popular than silicon technology in microwave and millimeter wave circuits because of its high electron mobility, low loss semi-insulating substrate, high linearity, high cutoff frequency, high breakdown voltage and so on. Especially, it is more suitable for the design of power amplifier, low noise amplifier and other circuits. Considering the above problems, this paper focuses on the design of low noise amplifier based on gallium arsenide process. The electrostatic protection circuit of gallium arsenide process is studied on the reliability of the circuit. On the one hand, as the first active module of the receiver, the low noise amplifier should be low enough to improve the sensitivity of the receiver, and should have high enough gain to suppress the noise of the later stage mixer and other circuits. In this paper, the low noise amplifier circuit adopts a two-stage source degradation structure. Different from the DC bias mode of off-chip inductor used in most gallium arsenide low noise amplifiers, the resistance with large on-chip resistance is used in this paper. The simulation results of LNA are as follows: the maximum gain is 33.257dB and the 3dB bandwidth is 520MHz (1.13GHz to 1.65GHz). In 1.16GHz-1.61GHz band, S11 is less than-10dB. In 1.14GHz-1.61GHz band, the output noise coefficient is always less than 0.6dBm, the output 1dB compression point is greater than 19.6dBm, the input 1dB compression point is greater than-12.8dBm, the output third-order truncation point is greater than 31dBm, and the input third-order truncation point is greater than-2dBm. The circuit layout area is 0.88mm 脳 1.3 mm. On the other hand, ESD is the biggest problem that causes unreliability of gallium arsenide process integrated circuits. Moreover, because the thermal conductivity and melting point of gallium arsenide process are lower than those of silicon material, the problem of unreliable gallium arsenide circuit caused by ESD is greater than that of silicon material. For this reason, a ESD protection circuit with stacked diode structure is designed in this paper. Low noise amplifier is an important module of receiver and an important part of microwave and millimeter wave application. It can be used in wireless communication, GPS, wireless local area network and other applications.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.3

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