65nm体硅CMOS工艺下单粒子瞬态效应加固方法的研究

发布时间：2019-06-10 22:29

【摘要】：集成电路作为航空航天器的核心,由于其应用的特殊性,在各种辐射源的作用下,将会产生各种辐射效应,从而导致航天器发生故障。辐射效应引起的集成电路失效机制有许多种。对于锁存器、触发器等时序单元而言,辐射环境中的高能粒子轰击电路敏感节点,会在入射轨迹上淀积大量电荷,这些电荷被电路收集,引起单元存储状态发生翻转,形成单粒子翻转效应(Single-Event Upset,SEU);对于组合逻辑电路而言,入射粒子淀积的电荷被敏感节点收集,产生瞬态电压脉冲,这些瞬态脉冲会沿着数据通路向下传播,可能被时序单元采集,最终导致电路状态破坏,形成单粒子瞬态效应(Single-EventTransient,SET)。随着集成电路工艺的发展、集成度的提高以及工作频率的增加,纳米工艺高频电路中SET导致的软错误逐渐占据主导,成为集成电路的主要失效模式。本文基于65nm体硅CMOS工艺,对影响集成电路软错误率的主要因素--SET展开研究,最终提出了相应的可行性加固方法。仿真结果表明本文提出的加固方法能够有效地减小SET的脉冲宽度,进而减小SET造成软错误的可能性,对抗辐照加固集成电路设计在理论上有着一定的指导意义。课题主要工作内容如下:(1)充分利用国内外现有研究成果,对单粒子瞬态效应的产生机理在理论上有了一定的了解,在此基础之上利用Synopsys TCAD 3D计算机辅助分析模拟手段,进行模拟仿真验证,进而加深了对于SET效应的理解,为后续提出抗SET效应的可行性方法打下基础。(2)本文在现有的通过调节恢复管的尺寸进行SET加固的方法基础上,提出了一种将被轰击晶体管拆分成两个并联的较小尺寸晶体管的加固方法,并且考虑到高功能低功耗集成电路的应用需求和实际辐射环境的复杂性,在不同的入射能量、入射角度、不同电压下分别进行模拟仿真,结果表明这种加固方法能够在不影响电路正常工作的情况下,有效地减小SET脉冲宽度,实现加固效果。(3)在第一种加固方法的基础上,本文提出了另一种利用两个晶体管串联的加固方法,仿真结果表明,这种方法能够有效降低SET脉冲幅度,对于抗SET加固研究具有一定意义。
[Abstract]:As the core of aeronautical spacecraft, integrated circuit will produce all kinds of radiation effects under the action of various radiation sources because of the particularity of its application, which will lead to the failure of spacecraft. There are many kinds of failure mechanisms of integrated circuits caused by radiation effect. For latch, flip-flop and other timing units, high energy particles bombarding sensitive nodes in the radiation environment will deposit a large number of charges on the incident trajectory, which are collected by the circuit, resulting in a reversal of the storage state of the unit. The single particle flip effect (Single-Event Upset,SEU) is formed. For combinational logic circuits, the charge deposited by incident particles is collected by sensitive nodes to produce transient voltage impulses, which propagate down the data path and may be collected by sequential units, which eventually lead to the destruction of the state of the circuit. The transient effect of single particle (Single-EventTransient,SET) is formed. With the development of integrated circuit technology, the improvement of integration and the increase of working frequency, the soft error caused by SET in high frequency circuit of nano-process gradually dominates and becomes the main failure mode of integrated circuit. In this paper, based on 65nm bulk silicon CMOS process, the main factor affecting the soft error rate of integrated circuits, SET, is studied, and the corresponding feasible reinforcement method is put forward. The simulation results show that the reinforcement method proposed in this paper can effectively reduce the pulse width of SET and then reduce the possibility of soft error caused by SET. The design of anti-irradiation reinforcement integrated circuit has certain guiding significance in theory. The main contents of this paper are as follows: (1) making full use of the existing research results at home and abroad, we have a certain understanding of the mechanism of single particle transient effect in theory, on the basis of which we use Synopsys TCAD 3D computer aided analysis and simulation means. The simulation results show that the understanding of SET effect is deepened and the feasible method of anti-SET effect is put forward. (2) this paper is based on the existing SET reinforcement method by adjusting the size of recovery pipe. In this paper, a reinforcement method is proposed to split the bombarded transistors into two small size transistors in parallel, and considering the application requirements of high function and low power integrated circuits and the complexity of the actual radiation environment, the incident energy is different. The incident angle and different voltage are simulated respectively. the results show that this reinforcement method can effectively reduce the SET pulse width without affecting the normal operation of the circuit. The reinforcement effect is realized. (3) on the basis of the first reinforcement method, another reinforcement method using two transistors in series is proposed in this paper. The simulation results show that this method can effectively reduce the amplitude of SET pulse. It has certain significance for the research of anti-SET reinforcement.
【学位授予单位】：安徽大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：V443;TN40

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