金属铜辅助刻蚀制备黑硅的研究
发布时间：2019-06-10 22:46
【摘要】：黑硅的制备及其在太阳能电池上的有效应用,是进一步降低光伏电池制造成本以及提升光电转换效率的有效途径之一。金属辅助刻蚀法是最近兴起的,具有操作方便、成本低廉、适合大规模制造的黑硅制备方法。本文对此方法进行了改进,利用金属铜辅助单步湿法刻蚀,在多晶硅及单晶硅上成功制备出黑硅,并系统研究了其反应机理。相较于常用的金属辅助刻蚀法,本文的研究意义在于：(1)金属铜相较于银、金、铂等其他贵金属成本更低；(2)金属铜易去除,不易残留于硅片中形成杂质和新的复合中心；(3)减反效果优异；(4)可制成多种类形貌,并可通过反应条件进行调控。本文的主要内容包括：在多晶硅上,我们通过对双氧水、氢氟酸、硝酸铜浓度以及反应温度的调节来调控黑硅形貌,当反应温度为60℃,[H2O2]:[HF]:[Cu(NO3)2]=2M:6M:0.08M时,刻蚀出的黑硅样品具有最低反射率,在300nm～1000nm波段内达到了5%的水平。此外,我们还研究了硅片刻蚀速率与双氧水、氢氟酸、硝酸铜浓度以及反应温度的关系,通过对实验数据进行拟合,发现影响反应速率的主要因素为反应物浓度、铜/硅接触面积以及反应的活化能。对于黑硅的各类形貌,我们用空穴注入模型予以了定性解释。在单晶硅上,我们成功制备出具有倒金字塔结构的表面形貌,其反射率在宽波段内同样达到了5%-6%的水平。倒金字塔结构形成的机理与碱制绒类似,原因在于单晶硅不同的晶面被氧化的难易程度不同,[100]面的氧化和刻蚀速率高于[110]、[111]等面,因此形成了各向异性的刻蚀。此外,对于用金属银和金属铜腐蚀所形成纳米结构的差异,我们用Ag+/Ag和Cu2+/Cu氧化还原势的不同予以了解释。
[Abstract]:The preparation of black silicon and its effective application in solar cells are one of the effective ways to further reduce the manufacturing cost of photovoltaic cells and improve the photoelectric conversion efficiency. Metal assisted etch method is a recently rising method, which has the advantages of convenient operation and low cost, and is suitable for large-scale fabrication of black silicon. In this paper, this method has been improved. Black silicon has been successfully prepared on polysilicon and single silicon by copper assisted single step wet etch, and its reaction mechanism has been systematically studied. The significance of this paper is as follows: (1) compared with silver, gold, platinum and other precious metals, the cost of copper is lower than that of other precious metals such as silver, gold, platinum and so on. (2) Copper is easy to remove and is not easy to remain in the silicon wafer to form impurities and new composite centers; (3) the anti-reaction effect is excellent; (4) many kinds of morphology can be prepared and can be controlled by reaction conditions. The main contents of this paper are as follows: on polysilicon, we regulate the morphology of black silicon by adjusting the concentration of hydrogen peroxide, hydrofluoric acid, copper nitrate and reaction temperature, when the reaction temperature is 60 鈩，
本文编号：2496790
[Abstract]:The preparation of black silicon and its effective application in solar cells are one of the effective ways to further reduce the manufacturing cost of photovoltaic cells and improve the photoelectric conversion efficiency. Metal assisted etch method is a recently rising method, which has the advantages of convenient operation and low cost, and is suitable for large-scale fabrication of black silicon. In this paper, this method has been improved. Black silicon has been successfully prepared on polysilicon and single silicon by copper assisted single step wet etch, and its reaction mechanism has been systematically studied. The significance of this paper is as follows: (1) compared with silver, gold, platinum and other precious metals, the cost of copper is lower than that of other precious metals such as silver, gold, platinum and so on. (2) Copper is easy to remove and is not easy to remain in the silicon wafer to form impurities and new composite centers; (3) the anti-reaction effect is excellent; (4) many kinds of morphology can be prepared and can be controlled by reaction conditions. The main contents of this paper are as follows: on polysilicon, we regulate the morphology of black silicon by adjusting the concentration of hydrogen peroxide, hydrofluoric acid, copper nitrate and reaction temperature, when the reaction temperature is 60 鈩，
本文编号：2496790
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