基于DICE结构的抗辐射移位寄存器设计研究

发布时间：2019-06-13 23:39

【摘要】：微电子技术的迅猛发展和航天科技的进步,互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)集成电路(Integrated Circuit,IC)在各种航天器和空间平台中得到了广泛地运用,无论是对设备的控制或者是对数据的存储和处理等,都在很大程度上依赖于IC,而这些设备所运行的空间环境是一个充满各种离子射线的辐射环境。空间飞行器运行在这样的辐射环境中时,设备中的电子器件就很容易受到各种高能离子的辐射影响,引起其信息处理系统的功能异常甚至是电子器件的损毁,从而大大降低了空间飞行器运行的可靠性。如何提高集成电路在辐射环境下工作的可靠性,成为了一个研究的热点。寄存器作为集成电路中非常重要的存储单元,对辐射效应尤为敏感,对寄存器的抗辐射加固制约着数字存储类和逻辑类集成电路的抗辐射性能。随着航天事业的不断发展,对集成电路的抗辐射性能要求越来越高。双互锁存(Dual interlocked storage cell,DICE)结构单元作为一种抗辐射加固设计方法,目前正被广泛地研究与应用,基于DICE结构的移位寄存器的设计对验证其抗辐射性能起着重要作用。基于上述背景,为了验证DICE结构加固设计方法在抗单粒子辐射方面的有效性,本文立足于0.18μm的商用工艺线,设计了基于DICE结构的1024位移位寄存器,并设计了单粒子辐射效应实验测试系统。具体研究内容包括:对空间辐射环境,集成电路中的各种辐射效应及损伤机理进行了理论分析与研究;针对存储单元尤为敏感的单粒子效应(Single event effects,SEEs)进行了重点地分析研究,并结合PN结和具体的锁存单元来对单粒子效应的影响进行了分析说明;对DICE结构的锁存单元的工作原理及其抗辐射性能进行了仿真研究。分别设计了采用DICE结构加固与采用传统6管结构的1024位的移位寄存器。首先利用软件模拟仿真的方法来进行单粒子辐射效应仿真,对比研究了传统结构D触发器与DICE结构的D触发器的抗单粒子辐射性能,并对时钟树等全局电路的抗辐射加固方法进行了研究。其次在D触发器的基础上设计1024位的移位寄存器,并对所设计的移位寄存器进行了版图加固设计、优化并完成了流片,对芯片功能测试的结果表明,达到了预期的设计效果。最后针对移位寄存器抗辐射实验的需要,设计并构建了抗单粒子辐射实验测试系统。本文对抗辐射存储单元的设计具有一定的参考意义。
[Abstract]:With the rapid development of microelectronics technology and the progress of space science and technology, complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor,CMOS integrated circuit (Integrated Circuit,IC) has been widely used in various spacecraft and space platforms. Whether it is the control of equipment or the storage and processing of data, it depends to a large extent on IC,. The space environment in which these devices operate is a radiation environment full of various ion rays. When the space vehicle runs in such a radiation environment, the electronic devices in the equipment are easily affected by the radiation of all kinds of high energy ions, which leads to the abnormal function of its information processing system and even the damage of the electronic devices, thus greatly reducing the reliability of the operation of the space vehicle. How to improve the reliability of integrated circuits in radiation environment has become a hot research topic. As a very important memory unit in integrated circuits, registers are particularly sensitive to radiation effect. The anti-radiation reinforcement of registers restricts the radiation resistance of digital storage and logic integrated circuits. With the continuous development of aerospace industry, the radiation resistance of integrated circuits is required to be higher and higher. As a kind of radiation reinforcement design method, double interlocked (Dual interlocked storage cell,DICE) structural unit is being widely studied and applied. The design of shift register based on DICE structure plays an important role in verifying its radiation resistance. Based on the above background, in order to verify the effectiveness of DICE structure reinforcement design method in resisting single particle radiation, a 1024 bit shift register based on DICE structure is designed based on 0.18 渭 m commercial process line, and an experimental test system for single particle radiation effect is designed. The specific research contents include: the space radiation environment, various radiation effects and damage mechanism in integrated circuits are analyzed and studied theoretically, and the single particle effect (Single event effects,SEEs, which is particularly sensitive to memory cells, is analyzed and studied, and the influence of single particle effect is analyzed and explained in combination with PN junction and specific latch unit. The working principle and radiation resistance of latch unit with DICE structure are simulated and studied. The 1024-bit shift register with DICE structure and traditional 6-tube structure is designed respectively. Firstly, the single particle radiation effect simulation is carried out by using the software simulation method, and the anti-single particle radiation performance of the traditional D flip-flop and the DICE D flip-flop is compared and studied, and the anti-radiation reinforcement method of the clock tree and other global circuits is studied. Secondly, a 1024-bit shift register is designed on the basis of D flip-flop, and the layout reinforcement design of the designed shift register is carried out, and the chip is optimized and completed. The results of the chip function test show that the expected design effect has been achieved. Finally, aiming at the need of anti-radiation experiment of shift register, a test system of anti-single particle radiation experiment is designed and constructed. The design of anti-radiation memory cell has certain reference significance in this paper.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN402

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