Effect of PECVD SiN x /SiO y N x –Si interface property on s
发布时间：2021-01-20 04:11
It is studied in this paper that the electrical characteristics of the interface between Si Oy Nx/Si Nx stack and silicon wafer affect silicon surface passivation. The effects of precursor flow ratio and deposition temperature of the Si Oy Nx layer on interface parameters, such as interface state density Ditand fixed charge Qf, and the surface passivation quality of silicon are observed. Capacitance–voltage measurements reveal that inserting...
【文章来源】：Chinese Physics B. 2016,25(12)
【文章页数】：5 页
本文编号：2988343
【文章来源】：Chinese Physics B. 2016,25(12)
【文章页数】：5 页
本文编号：2988343
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2988343.html
