简易化学水浴法制备SnO 2 /p-Si异质结光电性能（英文）
发布时间：2021-07-07 17:53
通过一种简易化学水浴法将SnO2薄膜沉积在晶硅衬底上以制备n-SnO2/p-Si异质结光电器件,这种自制的化学水浴装置非常便宜和方便.采用XRD、SEM、XPS、PL、紫外-可见光分光光度计和霍尔效应测试系统表征了SnO2薄膜的微结构、光学和电学性能,对SnO2/p-Si异质结的I-V曲线进行测试并分析,获得明显的光电转换特性.
【文章来源】：红外与毫米波学报. 2017,36(02)北大核心EISCICSCD
【文章页数】：5 页
【部分图文】：
多晶SnO薄膜简易化学水浴制备系统
?Table1ElectricalparametersofSnO2film表1SnO2薄膜的电学性能参数Materialρ/(Ω·cm)n/(atom/cm3)μ/(cm2/V·s)SnO213．671．087×10174．2012．2I-VcharacteristicsThelinearcurrent-voltage(I-V)behaviorsbetweenthetwoAgelectrodesonthesurfaceoftheSnO2filmareshowninFig．3．Theinsetshowstheschematicoftheteststructure．Itindicatesagoodohmiccontact．Thedis-tancebetweenthetwoAgelectrodesonthefilmis1cm．Fig．3I-VcharacteristicsofAgohmiccontactstotheSnO2film图3Ag电极与SnO2薄膜欧姆接触的I-V曲线Figure4showsatypicalI-Vcharacteristicofthe141
红外与毫米波学报36卷Fig．4I-VcurveoftheSnO2/p-Siheterojunctionindark图4无光照SnO2/p-Si异质结I-V曲线SnO2/p-Siheterojunctiondevicemeasuredindark．TheinsetinFig．4showstheheterojunctiondevicestructure．TheI-Vcurveofdeviceshowsarectifyingbehavior．Asmallleakagecurrentisobservedinthereversebiasre-gion，buttheforwardcurrentismuchhigherthanthere-versecurrent．AndthevalueofIF/IＲ(IFandIＲstandforforwardandreversecurrent，respectively)reachesto14.46．Ingeneral，theequationofthediodeisI=I0(eqVnkBT－1)，(2)wherenistheidealityfactorgivenby．Thevalueofnisfoundtobe7．4．WhilethevaluenofAZO/SiO2/p-SiSISheterojunctionpreparedbyＲFmagnetronsputteringis24．42［20］．TheresultsindicatethattheSnO2/p-Siheterojunctionhasgooddiodecharacteristics．Thep-nheterojunctionisformedattheinterfaceofthep-Siwaferandn-SnO2thinfilm．Fig．5I-VcharacteristicoftheSnO2/p-Siheterojunctionindarkandinlight(20Whalogenlamp)图5SnO2/p-Si异质结无光照及光照(20W卤钨灯)条件下I-V曲线ThephotoI-VcharacteristicoftheSnO2/p-Sihet-erojunctiondevicewasmeasuredunderilluminationbya20WhalogenlampasshowninFig．5．Typicalgoodrec-tifyingandphotoelectricbehaviorareobservedforthede-vice．Underthereversebias，thephotocurrentismuchlargerthanthedarkcurrent．Forexample，whenthere-versebiasis-5V，thedarkcurrentisonly7．33×10-5A，whilethephotocurrentreachesto1．44×10-3Aunderthe20Whalogenlampi
【参考文献】：
期刊论文
[1]Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films[J]. ZHAO Songqing1,2), ZHOU Yueliang1), WANG Shufang1), ZHAO Kun1,2), and HAN Peng1) 1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China 2) Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China. Rare Metals. 2006(06)
本文编号：3270088
【文章来源】：红外与毫米波学报. 2017,36(02)北大核心EISCICSCD
【文章页数】：5 页
【部分图文】：
多晶SnO薄膜简易化学水浴制备系统
?Table1ElectricalparametersofSnO2film表1SnO2薄膜的电学性能参数Materialρ/(Ω·cm)n/(atom/cm3)μ/(cm2/V·s)SnO213．671．087×10174．2012．2I-VcharacteristicsThelinearcurrent-voltage(I-V)behaviorsbetweenthetwoAgelectrodesonthesurfaceoftheSnO2filmareshowninFig．3．Theinsetshowstheschematicoftheteststructure．Itindicatesagoodohmiccontact．Thedis-tancebetweenthetwoAgelectrodesonthefilmis1cm．Fig．3I-VcharacteristicsofAgohmiccontactstotheSnO2film图3Ag电极与SnO2薄膜欧姆接触的I-V曲线Figure4showsatypicalI-Vcharacteristicofthe141
红外与毫米波学报36卷Fig．4I-VcurveoftheSnO2/p-Siheterojunctionindark图4无光照SnO2/p-Si异质结I-V曲线SnO2/p-Siheterojunctiondevicemeasuredindark．TheinsetinFig．4showstheheterojunctiondevicestructure．TheI-Vcurveofdeviceshowsarectifyingbehavior．Asmallleakagecurrentisobservedinthereversebiasre-gion，buttheforwardcurrentismuchhigherthanthere-versecurrent．AndthevalueofIF/IＲ(IFandIＲstandforforwardandreversecurrent，respectively)reachesto14.46．Ingeneral，theequationofthediodeisI=I0(eqVnkBT－1)，(2)wherenistheidealityfactorgivenby．Thevalueofnisfoundtobe7．4．WhilethevaluenofAZO/SiO2/p-SiSISheterojunctionpreparedbyＲFmagnetronsputteringis24．42［20］．TheresultsindicatethattheSnO2/p-Siheterojunctionhasgooddiodecharacteristics．Thep-nheterojunctionisformedattheinterfaceofthep-Siwaferandn-SnO2thinfilm．Fig．5I-VcharacteristicoftheSnO2/p-Siheterojunctionindarkandinlight(20Whalogenlamp)图5SnO2/p-Si异质结无光照及光照(20W卤钨灯)条件下I-V曲线ThephotoI-VcharacteristicoftheSnO2/p-Sihet-erojunctiondevicewasmeasuredunderilluminationbya20WhalogenlampasshowninFig．5．Typicalgoodrec-tifyingandphotoelectricbehaviorareobservedforthede-vice．Underthereversebias，thephotocurrentismuchlargerthanthedarkcurrent．Forexample，whenthere-versebiasis-5V，thedarkcurrentisonly7．33×10-5A，whilethephotocurrentreachesto1．44×10-3Aunderthe20Whalogenlampi
【参考文献】：
期刊论文
[1]Effect of ambient oxygen pressure on structural, optical and electrical properties of SnO2 thin films[J]. ZHAO Songqing1,2), ZHOU Yueliang1), WANG Shufang1), ZHAO Kun1,2), and HAN Peng1) 1) Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China 2) Department of Mathematics and Physics, China University of Petroleum, Beijing 102249, China. Rare Metals. 2006(06)
本文编号：3270088
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