Influence of surface states on deep level transient spectros

发布时间：2021-08-03 00:14

　　Deep level transient spectroscopy（DLTS） as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors（HEMTs） has been widely utilized.The DLTS measurements under different bias conditions are carried out in this paper.Two hole-like traps with active energies of E_v + 0.47 eV,and E_v + 0.10 eV are observed,which are related to surface states.The electron traps with active energies of E_c-0.56 eV are located in the channel,th... 

【文章来源】：Chinese Physics B. 2016,25(06)EISCI

【文章页数】：5 页


本文编号：3318546