石墨烯/硅异质结光电探测器的研究

发布时间：2021-10-07 01:00

　　从紫外、可见到红外的高性能宽光谱探测器有着广泛的科技应用。这个工作展示了一种基于范德华力的石墨烯与其氟化功能衍生物的异质结光电探测器。发现了紫外（255纳米）到中红外（4.3微米）一致的宽光谱响应,与本征石墨烯光电探测器相比,器件的响应度有了三个量级的提高。宽光谱的响应是由于空间上不均一联合的sp2区域的协同量子限域效应,和sp3区域局域态对光生载流子的俘获行为。对sp3键角,和sp3/sp2区域的大小与比值的调控可实现对光电响应的调控。此外,区分了光电响应由于sp3和sp2纳米区域的不同光生载流子的俘获时间。该工作提出的方案对制备高性能宽光谱石墨烯光电探测器提供了新的思路。更进一步,以功能氟化的CVD石墨烯为例。区别于传统的等离子体刻蚀的“硬膜版”,展示了一种基于溶液的“软膜板”方法,实现了可选择的去氟化,制备了精度高达50纳米的石墨烯/氟化石墨烯横向异质结。由此避免了石墨烯转移过程中的氧等离子体刻蚀,原子尺度厚的高质量连续膜的表面得以保护,这对高性能尤其是高速光电探测极为重要。进而,制备了这种石墨烯横向异质结的MSM高速光电探测器,得到了从深紫外（200纳米）到近红外（1100纳米... 

【文章来源】：浙江大学浙江省 211工程院校 985工程院校 教育部直属院校

【文章页数】：100 页

【学位级别】：博士

【文章目录】：
Abstract
摘要
List of Abbreviations
Chapter 1: Literature Review
    1.1 Graphene Introduction
    1.2 Graphene Production Methods
        1.2.1 Mechanical Exfoliation of Graphene
        1.2.2 Epitaxial Growth on Silicon Carbide
        1.2.3 Chemical Route
        1.2.4 CVD (Chemical Vapor Deposition) Graphene
    1.3 Graphene Applications
    1.4 Graphene Photodetectors
        1.4.1 Metal-Graphene Metal Photodetectors
        1.4.2 Graphene/ Semiconductor Heterostructure Photodetectors
            1.4.2.1 Graphene/Si Photodetector
            1.4.2.2 Graphene/GaNPhotodetector
            1.4.2.3 Graphene/Ge Photodetector
    1.5 Thesis Outline
    1.6 Source of Funding
Chapter 2: Fluorinated Graphene: Synthesis and Characterizations
    2.1 Introduction
    2.2 CVD Growth of Graphene
    2.3 Modified Transfer of Graphene
    2.4 Raman Analysis of Graphene
    2.5 Fluorination of Graphene
    2.6 Characterizations of Fluorinated Graphene
        2.6.1 XPSAnalysis of FG
        2.6.2 Raman Analysis of FG
        2.6.3 Electrical Properties of FG
Chapter 3: Broadband Fluorographene Photodetector
    3.1 Introduction
    3.2 Results and Discussions
    3.3 Experimental Methods
Chapter 4: Solvent based Soft Patterning of Graphene Lateral Heterostructures forBroadband High-Speed MSM Photodetectors
    4.1 Introduction
    4.2 Solvents Based De-fluorination of FG
    4.3 Simulation Results
    4.4 Graphene-FG Lateral Heterostructures
    4.5 Graphene-FG Heterostructure Photodetectors
    4.6 Materials and Methods
    4.7 Characterizations and Measurements
Chapter 5: High-Performance, Flexible Graphene/Ultra-thin Silicon UV Image Sensor
    5.1 Introduction
    5.2 Device Fabrication Process
    5.3 Device Characterizations
    5.4 Results and Discussions
Chapter 6: Black Phosphorus Enhanced Silicon IR Photodetector
    6.1 Introduction
    6.2 Device Fabrication Process
    6.3 Results and Discussions
Chapter 7: Conclusion
References
List of Publication



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