Performance improvement of InGaN/GaN multiple quantum well v

发布时间：2022-01-13 01:56

　　The performance of an InGaN/GaN multiple quantum well（MQW） based visible-light Schottky photodiode（PD）is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the In GaN QWs with using ... 

【文章来源】：Chinese Physics B. 2017,26(08)EISCI

【文章页数】：6 页

【文章目录】：
1. Introduction
2. Experimental procedure
3. Results and discussion
4. Conclusions


【参考文献】：
期刊论文
[1]InGaN基可见光光电二极管研究进展[J]. 黎斌,卫静婷,谭露雯.  广东开放大学学报. 2018(03)

博士论文
[1]面向可见光通信的硅基氮化物同质光电子集成芯片研究[D]. 高绪敏.南京邮电大学 2018



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