固相烧结SiC陶瓷的非线性电学行为研究

发布时间：2018-02-04 08:36

本文关键词： SiC 固相烧结非线性电阻热敏电阻　出处：《无机材料学报》2017年01期 　论文类型：期刊论文

【摘要】：固相烧结SiC(SSiC)陶瓷大多数用于结构陶瓷材料,用于电子和电阻元器件的研究很少。实验以添加不同C含量的致密SSiC陶瓷材料为研究对象,研究了添加不同C含量SSiC陶瓷的伏安特性、电阻率与电流密度的变化关系及电阻率与温度的变化关系。研究结果表明:SSiC陶瓷表现出明显的非线性电学特性,其电阻率随着电流的增大而降低;对于添加3wt%C含量的SSiC陶瓷,当电场强度超过15.8 V/mm时,晶界势垒被击穿;对于添加6wt%C含量的SSiC陶瓷,当电场强度超过70.7 V/mm时,晶界势垒被击穿,它们的电阻率将为晶粒所控制,电阻率较小;同时在电场强度1 V/mm条件下,SSiC陶瓷电阻率随着温度的升高而降低,表现出很好热敏特性,从常温的106?·cm变化为400℃的5?·cm左右。
[Abstract]:Solid-phase sintered sic sic Si C ceramics are mostly used in structural ceramics, but seldom used in electronic and resistive components. Dense SSiC ceramics with different C content are used as the research objects in the experiment. The voltammetric characteristics of SSiC ceramics with different C content were studied. The relationship between resistivity and current density and between resistivity and temperature. The results show that the resistivity of SSiC ceramic decreases with the increase of current. For the SSiC ceramics with 3 wtand C content, the grain boundary barrier is broken down when the electric field intensity exceeds 15.8 V / mm. For the SSiC ceramics with 6wt and C content, when the electric field intensity exceeds 70.7 V / mm, the grain boundary barrier is broken down, their resistivity is controlled by the grain size and the resistivity is smaller. At the same time, the resistivity of SSiC ceramics decreases with the increase of temperature under the condition of electric field intensity of 1 V / mm. 路cm changing to 5? 路cm or so.
【作者单位】：中国科学院上海硅酸盐研究所结构陶瓷工程研究中心;
【基金】：国家自然科学基金(51302288)~~
【分类号】：TQ174.1
【正文快照】： (Structural Ceramics Engineering Research Center,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai200050,China)在工业应用中,越来越多的传感器和致动器部署在温度较高的环境中,标准的半导体和元件所能承受的温度最高约为125℃,因此业界迫切需要新

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