离子束辅助沉积制备TiN薄膜工艺及薄膜性能研究

发布时间：2018-02-20 23:41

  本文关键词： TiN 离子束辅助沉积 电阻率 热稳定性　出处：《中国地质大学(北京)》2017年硕士论文　论文类型：学位论文

【摘要】：TiN是一种性能优良应用广泛的过渡族金属化合物,其制备方法有化学气相沉积、电弧离子镀、磁控溅射、离子束辅助沉积等。改变Ti/N的化学配比、离子轰击能量及沉积温度可以改善TiN薄膜的性能。TiN常常需要在高温下长时间服役,然而目前关于TiN在高温下长时间服役的报道还比较少。本文以探究离子束辅助沉积工艺参数对TiN薄膜组织、结构、性能和高温稳定性为目的,研究了N2/(N2+Ar)流量比、基体温度、辅助沉积离子能量对薄膜的组织、结构、性能,以及在真空退火中,其发生的变化。研究结果表明:(1)随着N2/(N2+Ar)流量比的增大,薄膜中的N含量显著上升。同时,N2/(N2+Ar)流量比的上升还引起了薄膜择优取向的变化,薄膜从(200)取向择优逐步转化为了(220)取向择优。当薄膜呈现显著(200)择优取向时,薄膜的电阻率较小。在实验中不同N2/(N2+Ar)流量比制得的薄膜的取向随着退火的进行而有所变化,短时间退火能够使得薄膜延退火前的优势取向方向继续生长,薄膜电阻率有所下降。退火时间延长后至10-20小时后,部分薄膜产生热裂,电阻率大幅上升,薄膜失效。(2)在低温状态下沉积的TiN薄膜,由于温度较低膜层粒子的迁移能力差,因此,退火前薄膜呈现自由生长状态。沉积温度升高薄膜的(220)及(200)取向开始逐渐占据优势。300℃沉积时,薄膜的(220)取向的织构化系数最大,薄膜的电阻率最低。不同基体温度沉积的Ti N薄膜在退火后薄膜均未发生失效。退火过程中,膜层粒子获得迁移能力,逐渐向能量较低的取向转化。退火1小时,薄膜的电阻率有所下降,退火10小时和20小时后,薄膜的电阻率变化不大。(3)离子轰击能量,会改变薄膜在沉积态的取向。当薄膜的离子轰击能量过高时,薄膜的择优取向被打碎,薄膜各取向的织构化系数近似相同。退火后,薄膜向能量较低取向转变。离子轰击可能使得薄膜变得致密,因而,电阻率下降。不同离子轰击能量条件下制备的薄膜在1小时退火后电阻率有所下降,在退火10小时后,随着退火时间的延长,其电阻率无明显变化。(4)实验制得的TiN薄膜的最小电阻率约为36.5μ?·cm。薄膜在800℃真空环境中服役20小时未发生失效。
[Abstract]:TiN is a kind of transition metal compound with excellent properties and wide application. Its preparation methods include chemical vapor deposition, arc ion plating, magnetron sputtering, ion beam assisted deposition, etc. Ion bombardment energy and deposition temperature can improve the properties of TiN thin films. Tin often requires long service at high temperatures. However, there are few reports about the long service of TiN at high temperature. In order to investigate the effect of ion beam assisted deposition process parameters on the structure, structure, properties and high temperature stability of TiN films, the flow ratio of N _ 2 / N _ 2 and the substrate temperature are studied. The effect of auxiliary deposition ion energy on the structure, structure, properties, and the changes of the film during vacuum annealing. The results show that: 1) with the increase of N _ 2 / N _ 2 / N _ 2 ar / N _ 2 flow ratio, The N content in the films increased significantly, and the increase of N _ 2 / N _ 2 flow ratio also led to the change of the preferred orientation of the films. In the experiment, the orientation of the films prepared by different N _ 2 / N _ 2 ar / N _ 2 flow ratio varies with the annealing process, and short time annealing can make the films continue to grow in the direction of dominant orientation before annealing. The resistivity of the films decreased. After annealing time was prolonged to 10-20 hours, some of the films produced hot cracks, and the resistivity of the films increased significantly. The TiN films deposited at low temperature due to the poor migration ability of the particles at lower temperature, Therefore, the films showed free growth state before annealing. When the orientation of the films began to occupy the dominant position at .300 鈩，

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