石墨烯基二维垂直异质结的制备及光电子器件

发布时间：2018-03-01 15:26

本文关键词： 石墨烯二维材料异质结光电子　出处：《材料科学与工艺》2017年03期 　论文类型：期刊论文

【摘要】：石墨烯和类石墨烯二维半导体材料因其独特的物理化学性质受到研究人员的广泛关注,将二者结合组成的石墨烯基二维垂直异质结近年来备受研究者的青睐.本文简要介绍了石墨烯基二维垂直异质结的基本概念和性质,综述了石墨烯基二维垂直异质结制备技术的最新进展情况,对比分析了不同制备方法各自的优缺点,总结了石墨烯基二维垂直异质结在光电子学器件应用的最新进展.最后对石墨烯基二维垂直异质结的研究和发展方向做了展望.
[Abstract]:Graphene and graphene like two-dimensional semiconductor materials have attracted extensive attention due to their unique physical and chemical properties. In this paper, the basic concepts and properties of graphene based two-dimensional vertical heterostructures are briefly introduced. The recent progress in the preparation of graphene based two-dimensional vertical heterostructures is reviewed, and the advantages and disadvantages of different preparation methods are compared and analyzed. The recent progress in the application of graphene based two-dimensional vertical heterostructures in optoelectronic devices is summarized. Finally, the research and development of graphene based two-dimensional vertical heterostructures are prospected.
【作者单位】：微系统与微结构制造教育部重点实验室(哈尔滨工业大学);哈尔滨工业大学材料科学与工程学院;
【基金】：国家自然科学基金资助项目(61390502,21373068,51521003) 机器人国家重点实验室重点课题(SKLRS201607B)
【分类号】：TN15;TQ127.11

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