西门子反应器中硅棒热电行为数值模拟与分析

发布时间：2018-03-03 06:03

  本文选题：多晶硅　切入点：趋肤效应　出处：《人工晶体学报》2017年10期 　论文类型：期刊论文

【摘要】：改良西门子法制备多晶硅过程中,化学气相沉积所需能量全部由电流加热硅棒提供。本文考虑多晶硅还原炉中辐射和对流热量传递形式,耦合频率控制的焦耳电加热方程,建立了12对棒多晶硅还原炉热场-电磁场耦合模型,并通过工业数据验证了其模拟结果的合理性。分析了硅棒半径、交流电频率以及反应器壁发射率对西门子还原炉内、外硅棒内部温度及电流密度分布的影响。结果表明:当硅棒半径增长到所用交流电频率引起的趋肤深度时,交流电趋肤效应开始显著影响硅棒内部温度梯度;交流电频率的增大,硅棒内部温度梯度逐渐减小;反应器壁发射率增加,低频时硅棒内部温差增大,而高频时发射率对硅棒内部温度分布影响不再显著。
[Abstract]:In the process of preparing polycrystalline silicon by modified Siemens method, the energy required for chemical vapor deposition is provided by the current heated silicon rod. In this paper, the radiation and convection heat transfer in the polysilicon reduction furnace and the coupling frequency controlled Joule electric heating equation are considered. The coupling model of thermal field and electromagnetic field of 12 pairs of rods polysilicon reduction furnace is established, and the rationality of the simulation results is verified by industrial data. The radius of silicon rod, alternating current frequency and the emissivity of reactor wall to Siemens reduction furnace are analyzed. The results show that when the radius of silicon rod increases to the skin depth caused by the used AC frequency, the skin effect of alternating current begins to affect the internal temperature gradient of silicon rod. With the increase of alternating current frequency, the internal temperature gradient of silicon rod decreases gradually, the emissivity of reactor wall increases, the temperature difference increases at low frequency, but the influence of high frequency emittance on the internal temperature distribution of silicon rod is not significant.
【作者单位】： 昆明理工大学复杂有色金属资源清洁利用国家重点实验室;昆明理工大学冶金与能源工程学院;昆明冶金研究院;
【基金】：国家自然科学基金地区项目(21566015) 中国博士后科学基金(2017M613281XB)
【分类号】：TQ127.2
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本文编号：1559813