三维金属微细阵列电极微电铸技术研究

发布时间：2018-03-10 02:05

本文选题：UV-LIGA　切入点：微电铸　出处：《中北大学》2017年硕士论文　论文类型：学位论文

【摘要】：随着MEMS技术的不断发展,微机电系统在光学、电子学、生物医学等其他领域的应用逐渐增多。而微电铸工艺作为MEMS工艺中的关键部分,也得到了越来越多研究者的重视。微细阵列电极由多根排列整齐的微细电极组合而成,具有许多非常优良的电化学性能,在微细加工和生物科学等领域应用广泛。本文选取三维金属微细阵列电极为加工对象,首先对所要加工的微电极阵列进行了特征尺寸的标定,然后对基于种子层位置的两种电铸生长方式盲孔填充、模具成型过程的原理做了简单的介绍,接着对实验中选择的KMPR光刻胶与BPN-65A光刻胶的基本性质以及甩胶、烘胶、曝光等参数都做了具体的探究,然后指出了电镀与电铸的异同之处,并对电镀液的反应机理以及镀液中各成分的作用和工艺条件对电镀效果的影响都做了详细的分析。接着进行了微电极阵列的加工制备,分别使用KMPR光刻胶与BPN光刻胶甩出指定的厚度,经前烘、紫外曝光、后烘、显影等步骤制备出所需胶模结构,根据电铸方法的不同,分别在甩胶前与后烘后进行了种子层的溅射,溅射金属为铜,约300nm(前烘前溅射时,先溅射一层粘附层金属层铬约50nm,再溅射种子层),选择190g/mL的CuSO4·5H2O、60g/L的H2SO4、70mg/L的氯离子以及适量的添加剂配置成的电铸液,并采用酸性铸铜工艺,设置电流密度1.5A/dm2,进行电铸,经抛光处理后,分别得到了三种截面形状的多种微细阵列电极,最后在场发射扫描电子显微镜下对所制得的微细阵列电极进行了观察比对。论文从工艺的角度出发,以微电极阵列为研究对象,对KMPR光刻胶、BPN光刻胶以及盲孔填充和模具电铸两种电铸填充方式做了简单的探究,对今后微电极的加工以及微电铸的研究提供了一定的帮助。
[Abstract]:With the development of MEMS technology, the application of MEMS in optics, electronics, biomedicine and other fields is increasing. It has been paid more and more attention by many researchers. The microarray electrode is composed of many well-arranged microelectrodes and has many excellent electrochemical properties. It is widely used in the fields of micromachining and biological science. In this paper, three-dimensional metal microarray electrodes are selected as machining objects, and the characteristic dimensions of the microelectrode arrays are calibrated. Then, the paper introduces the principle of blind hole filling and die forming process of two kinds of electroforming growth methods based on the position of seed layer, and then introduces the basic properties of KMPR photoresist and BPN-65A photoresist selected in the experiment, as well as the basic properties of throwing glue and baking glue. The exposure and other parameters are studied in detail, and then the similarities and differences between electroplating and electroforming are pointed out. The reaction mechanism of electroplating solution and the effect of various components and process conditions on the electroplating effect were analyzed in detail. Then the fabrication of microelectrode array was carried out. KMPR photoresist and BPN photoresist were used to separate out the specified thickness, and the structure of the mould was prepared by the steps of pre-baking, ultraviolet exposure, post-drying and development. According to the different electroforming methods, The sputter of seed layer was carried out before and after baking respectively. The sputtering metal was copper, about 300 nm before and after drying. First sputtering a layer of metal layer about 50nmCr, then sputtering the seed layer, selecting 190g / mL CuSO4 路5H2O 60g / L H2SO4H2SO4H2SO4 60g / L and proper amount of additive to configure the electroforming solution, and using acidic copper casting process, setting the current density of 1.5Adm2for electroforming, and after polishing, the electroforming was carried out. Three kinds of microarray electrodes with different cross-section shapes were obtained respectively. Finally, the microarray electrodes were observed and compared under the field emission scanning electron microscope. From the point of view of technology, the microelectrode array was taken as the research object. This paper makes a simple research on KMPR photoresist, blind hole filling and die electroforming filling, and provides some help for the processing of microelectrode and the research of microelectroforming in the future.
【学位授予单位】：中北大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TQ153.4

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