不同圆角半径金刚石划擦单晶SiC过程中的材料去除机理研究

发布时间：2018-03-15 18:18

本文选题：单颗磨粒划擦　切入点：单晶碳化硅　出处：《机械工程学报》2017年15期 　论文类型：期刊论文

【摘要】：以单晶碳化硅(Si C)作为加工对象,通过不同尖端圆角半径的圆锥型金刚石磨粒划擦试验观察了单晶Si C的去除过程,并采用FEM与SPH耦合算法模拟仿真了三种不同尖端圆角半径的单颗磨粒划擦Si C过程中的材料去除过程,试验结果与模拟结果基本一致。在此基础上,采用仿真手段从最大等效应力和接触力的角度分析了三种不同尖端圆角半径对单晶碳化硅材料脆塑转变过程材料去除机理的影响。仿真结果表明:随着尖端圆角半径的增加,弹塑性变形-塑脆临界的转变点趋近于0.14μm,而且纯粹的塑性变形模式逐渐消失;脆塑临界去除模式所占的区域逐渐变长,由脆塑临界-脆性去除的转变点的深度也在不断变深;脆塑转变过程中的微裂纹的长度及粗细程度逐渐增加,材料破坏的形式也逐渐升级。
[Abstract]:The single crystal silicon carbide (Si C) as the processing object, through different conical diamond tip radius abrasive scratch test to observe the removal process of Si single crystal C, and using FEM and SPH coupling algorithm simulation of the removal process of three different tip radius of the single abrasive scratch Si C process materials, test results and simulation results are basically consistent. On this basis, using the simulation method from the maximum equivalent stress and contact stress analysis of the effects of three different tip radius removal mechanism of brittle ductile transition process of materials of single crystal silicon carbide materials. The simulation results show that with the increase of tip radius, elastic-plastic deformation - critical ductile brittle transition point close to 0.14 m, and the pure plastic deformation mode gradually disappear; brittle plastic removal mode for critical areas gradually long, by the brittle ductile transition critical brittle removal The depth of the point is also deepened, and the length and the thickness of the micro cracks in the brittle plastic transition gradually increase, and the form of material destruction is gradually upgraded.

【作者单位】：华侨大学脆性材料加工技术教育部工程研究中心;
【基金】：国家自然科学基金(51575197,51375179) 教育部博士点基金(20133501130001) 福建省教育厅重点(JA13010)资助项目
【分类号】：TQ127.2

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